Resistive switching in non-stoichiometric germanosilicate glass films containing ge nanoclusters › Research Explorer

DOI

https://doi.org/10.3390/electronics9122103
Final published version

Vladimir A. Volodin
Pavel Geydt
Gennadiy N. Kamaev
Andrei A. Gismatulin
Grigory K. Krivyakin
Igor P. Prosvirin
Ivan A. Azarov
Zhang Fan
Michel Vergnat

Original language	English
Article number	2103
Pages (from-to)	1-17
Number of pages	17
Journal	Electronics (Switzerland)
Volume	9
Issue number	12
DOIs	https://doi.org/10.3390/electronics9122103
Publication status	Published - Dec 2020

Research areas

Ge nanoclusters, Germanosilicate glass, Memristor, Resistance states, Thin films, SIOX FILMS, resistance states, memristor, NANOCRYSTALS, OPTICAL-PROPERTIES, germanosilicate glass, thin films

OECD FOS+WOS

ID: 26702365