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  1. 2018

  2. Electrically controlled spin polarization in suspended GaAs quantum point contacts

    Pokhabov, D. A., Pogosov, A. G., Zhdanov, E. Y., Shevyrin, A. A., Bakarov, A. K. & Shklyaev, A. A., 1 Jan 2018, In: Journal of Physics: Conference Series. 1124, 6, 061001.

    Research output: Contribution to journal › Conference article › peer-review

  3. 2017

  4. Photoluminescence from Ordered Ge/Si Quantum Dot Groups Grown on the Strain-Patterned Substrates

    Dvurechenskii, A., Zinovieva, A., Zinovyev, V., Nenashev, A., Smagina, Z., Teys, S., Shklyaev, A., Erenburg, S., Trubina, S., Borodavchenko, O., Zhivulko, V. & Mudryi, A., 1 Dec 2017, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 14, 12, 6 p., 1700187.

    Research output: Contribution to journal › Article › peer-review

  5. Photonic metasurface made of array of lens-like SiGe Mie resonators formed on (100) Si substrate via dewetting

    Poborchii, V., Shklyaev, A., Bolotov, L., Uchida, N., Tada, T. & Utegulov, Z. N., 1 Dec 2017, In: Applied Physics Express. 10, 12, 4 p., 125501.

    Research output: Contribution to journal › Article › peer-review

  6. Submicron- and micron-sized SiGe island formation on Si(100) by dewetting

    Shklyaev, A. A. & Budazhapova, A. E., 30 Nov 2017, In: Thin Solid Films. 642, p. 345-351 7 p.

    Research output: Contribution to journal › Article › peer-review

  7. Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region

    Krivyakin, G. K., Volodin, V. A., Shklyaev, A. A., Mortet, V., More-Chevalier, J., Ashcheulov, P., Remes, Z., Stuchliková, T. H. & Stuchlik, J., 1 Oct 2017, In: Semiconductors. 51, 10, p. 1370-1376 7 p.

    Research output: Contribution to journal › Article › peer-review

  8. Electromechanical coupling in suspended nanomechanical resonators with a two-dimensional electron gas

    Shevyrin, A. A., Pogosov, A. G., Bakarov, A. K. & Shklyaev, A. A., 15 Aug 2017, In: Journal of Physics: Conference Series. 864, 1, 4 p., 012043.

    Research output: Contribution to journal › Conference article › peer-review

  9. Critical conditions for SiGe island formation during Ge deposition on Si(100) at high temperatures

    Shklyaev, A. A. & Budazhapova, A. E., 1 Jan 2017, In: Materials Science in Semiconductor Processing. 57, p. 18-23 6 p.

    Research output: Contribution to journal › Article › peer-review

  10. Formation of Periodic Structures (2D-PhCs) by Scanning Electron Lithography

    Utkin, D., Shklyev, A., Tsarev, A., Latyshev, A. & Nasimov, D., 1 Jan 2017, In: Physics Procedia. 86, p. 127-130 4 p.

    Research output: Contribution to journal › Conference article › peer-review

  11. Surface Morphologies Obtained by Ge Deposition on Bare and Oxidized Silicon Surfaces at Different Temperatures

    Shklyaev, A. A., Romanyuk, K. N., Kosolobov, S. S. & Latyshev, A. V., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 325-344 20 p.

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  12. THE DEPOSITION OF GERMANIUM NANOPARTICLES ON HYDROGENATED AMORPHOUS SILICON

    Stuchlik, J., Volodin, V. A., Shklyaev, A. A., Stuchlikova, T. H., Ledinsky, M., Cermak, J., Kupcik, J., Fajgar, R., Mortet, V., More-Chevalier, J., Ashcheulov, P., Purkrt, A. & Remes, Z., 2017, 8TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2016). TANGER LTD, p. 133-137 5 p.

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  13. 2011

  14. Технология получения высокоупорядоченной ступенчатой поверхности Si (111) -7x7

    Романюк, К. Н. & Шкляев, А. А., 25 Nov 2011, Редакционно-издательский центр НГУ, Patent No. 6, Priority date 22 Nov 2011

    Research output: Patent › Know-how registration

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