Universality of the (113) Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation

Fedina, L. I., Gutakovskii, A. K., Latyshev, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Inc., p. 383-407 25 p.

Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

Application of surface-enhanced infrared spectroscopy for steroids analysis

Cherkasova, O. P., Milekhin, A. G., Milekhin, I. A., Kuznetsov, S. A., Rodyakina, E. E. & Latyshev, A. V., 23 Aug 2016, Proceedings - 2016 International Conference Laser Optics, LO 2016. Institute of Electrical and Electronics Engineers Inc., p. S229 (Proceedings - 2016 International Conference Laser Optics, LO 2016).

Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

Formation of DNA molecules ordered systems on silicon surfaces

Matkhonova, E. Y., Utkin, D. E., Kozhukhov, A. S., Sheglov, D. V., Nasimov, D. A. & Latyshev, A. V., 2012, 2012 13th Annual International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM'2012 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 13-15 3 p. 6310204. (International Workshop and Tutorials on Electron Devices and Materials, EDM - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review