Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions

Original language	English
Title of host publication	Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications
Subtitle of host publication	Growth, Characterization, Properties and Applications
Editors	AV Latyshev, AV Dvurechenskii, AL Aseev
Publisher	Elsevier Science Publishing Company, Inc.
Pages	255-277
Number of pages	23
ISBN (Electronic)	9780128105139
ISBN (Print)	9780128105122
DOIs	https://doi.org/10.1016/B978-0-12-810512-2.00010-X
Publication status	Published - 1 Jan 2017

Name	Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications

Annealing, Atomic steps, Dislocations, GaAs, Heterostructures, Monte Carlo simulation, Ostwald ripening, Step-terraced morphology, Stress relaxation, Surface smoothing, VICINAL SURFACES, RELAXATION, GAAS(001) SURFACE, ANISOTROPY, MISFIT DISLOCATIONS, FILMS, GROWTH, DIFFUSION, MONTE-CARLO-SIMULATION, MORPHOLOGY

ID: 21753631