Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions

Original language	English
Title of host publication	Advances in Semiconductor Nanostructures
Subtitle of host publication	Growth, Characterization, Properties and Applications
Editors	AV Latyshev, AV Dvurechenskii, AL Aseev
Publisher	Elsevier Science Inc.
Pages	255-277
Number of pages	23
ISBN (Electronic)	9780128105139
ISBN (Print)	9780128105122
DOIs	https://doi.org/10.1016/B978-0-12-810512-2.00010-X
Publication status	Published - 1 Jan 2017

Annealing, Atomic steps, Dislocations, GaAs, Heterostructures, Monte Carlo simulation, Ostwald ripening, Step-terraced morphology, Stress relaxation, Surface smoothing, VICINAL SURFACES, RELAXATION, GAAS(001) SURFACE, ANISOTROPY, MISFIT DISLOCATIONS, FILMS, GROWTH, DIFFUSION, MONTE-CARLO-SIMULATION, MORPHOLOGY

ID: 21753631