1. 2017
  2. Local monitoring of atomic steps on GaAs(001) surface under oxidation, wet removal of oxides and thermal smoothing

    Akhundov, I. O., Kazantsev, D. M., Alperovich, V. L., Sheglov, D. V., Kozhukhov, A. S. & Latyshev, A. V., 1 Jun 2017, In: Applied Surface Science. 406, p. 307-311 5 p.

    Research output: Contribution to journalArticlepeer-review

  3. Nanoantenna-assisted plasmonic enhancement of IR absorption of vibrational modes of organic molecules

    Milekhin, A. G., Cherkasova, O., Kuznetsov, S. A., Milekhin, I. A., Rodyakina, E. E., Latyshev, A. V., Banerjee, S., Salvan, G. & Zahn, D. R. T., 3 May 2017, In: Beilstein Journal of Nanotechnology. 8, 1, p. 975-981 7 p.

    Research output: Contribution to journalArticlepeer-review

  4. Surface-Enhanced Infrared Absorption by Optical Phonons in Nanocrystal Monolayers on Au Nanoantenna Arrays

    Milekhin, A. G., Kuznetsov, S. A., Sveshnikova, L. L., Duda, T. A., Milekhin, I. A., Rodyakina, E. E., Latyshev, A. V., Dzhagan, V. M. & Zahn, D. R. T., 16 Mar 2017, In: Journal of Physical Chemistry C. 121, 10, p. 5779-5786 8 p.

    Research output: Contribution to journalArticlepeer-review

  5. Element base of quantum informatics II: Quantum communications with single photons

    Ryabtsev, I. I., Tretyakov, D. B., Kolyako, A. V., Pleshkov, A. S., Entin, V. M., Neizvestny, I. G., Latyshev, A. V. & Aseev, A. L., 1 Mar 2017, In: Russian Microelectronics. 46, 2, p. 121-130 10 p.

    Research output: Contribution to journalArticlepeer-review

  6. Element base of quantum informatics I. Qubits of a quantum computer based on single atoms in optical traps

    Ryabtsev, I. I., Beterov, I. I., Yakshina, E. A., Tretyakov, D. B., Entin, V. M., Neizvestny, I. G., Latyshev, A. V. & Aseev, A. L., 1 Mar 2017, In: Russian Microelectronics. 46, 2, p. 109-120 12 p.

    Research output: Contribution to journalArticlepeer-review

  7. Local anodic oxidation of solid GeO films: The nanopatterning possibilities

    Astankova, K. N., Gorokhov, E. B., Azarov, I. A., Volodin, V. A. & Latyshev, A. V., 1 Mar 2017, In: Surfaces and Interfaces. 6, p. 56-59 4 p.

    Research output: Contribution to journalArticlepeer-review

  8. Giant microwave-induced B -periodic magnetoresistance oscillations in a two-dimensional electron gas with a bridged-gate tunnel point contact

    Levin, A. D., Mikhailov, S. A., Gusev, G. M., Kvon, Z. D., Rodyakina, E. E. & Latyshev, A. V., 23 Feb 2017, In: Physical Review B. 95, 8, 4 p., 081408.

    Research output: Contribution to journalArticlepeer-review

  9. Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth

    Sitnikov, S. V., Kosolobov, S. S. & Latyshev, A. V., 1 Feb 2017, In: Semiconductors. 51, 2, p. 203-206 4 p.

    Research output: Contribution to journalArticlepeer-review

  10. 2D Si island nucleation on the Si(111) surface at initial and late growth stages: On the role of step permeability in pyramidlike growth

    Rogilo, D. I., Fedina, L. I., Kosolobov, S. S., Ranguelov, B. S. & Latyshev, A. V., 1 Jan 2017, In: Journal of Crystal Growth. 457, p. 188-195 8 p.

    Research output: Contribution to journalArticlepeer-review

  11. Advacancy-mediated atomic steps kinetics and two-dimensional negative island nucleation on ultra-flat Si(111) surface

    Sitnikov, S. V., Latyshev, A. V. & Kosolobov, S. S., 1 Jan 2017, In: Journal of Crystal Growth. 457, p. 196-201 6 p.

    Research output: Contribution to journalArticlepeer-review

  12. AlInAs quantum dots

    Gaisler, A. V., Derebezov, I. A., Gaisler, V. A., Dmitriev, D. V., Toropov, A. I., Kozhukhov, A. S., Shcheglov, D. V., Latyshev, A. V. & Aseev, A. L., 1 Jan 2017, In: JETP Letters. 105, 2, p. 103-109 7 p.

    Research output: Contribution to journalArticlepeer-review

  13. Atomic Processes on the Silicon Surface

    Latyshev, A. V., Fedina, L. I., Kosolobov, S. S., Sitnikov, S. V., Rogilo, D. I., Rodyakina, E. E., Nasimov, D. A., Sheglov, D. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Inc., p. 189-221 33 p.

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

  14. Atomic Structure of Semiconductor Low-Dimensional Heterosystems

    Gutakovskii, A. K., Latyshev, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Inc., p. 223-253 31 p.

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

  15. Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions

    Alperovich, V. L., Akhundov, I. O., Kazantsev, D. M., Rudaya, N. S., Rodyakina, E. E., Kozhukhov, A. S., Sheglov, D. V., Karpov, A. N., Shwartz, N. L., Terekhov, A. S. & Latyshev, A. V., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Inc., p. 255-277 23 p.

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

  16. Formation of Periodic Structures (2D-PhCs) by Scanning Electron Lithography

    Utkin, D., Shklyev, A., Tsarev, A., Latyshev, A. & Nasimov, D., 1 Jan 2017, In: Physics Procedia. 86, p. 127-130 4 p.

    Research output: Contribution to journalConference articlepeer-review

  17. Preface

    Latyshev, A. V., Dvurechenskii, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Science Inc., p. xxiii-xxiv

    Research output: Chapter in Book/Report/Conference proceedingForeword/postscriptResearchpeer-review

  18. Preface

    Latyshev, A. V., Dvurechenskii, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Science Inc., p. xxiii-xxiv

    Research output: Chapter in Book/Report/Conference proceedingForeword/postscriptResearchpeer-review

  19. Surface Morphologies Obtained by Ge Deposition on Bare and Oxidized Silicon Surfaces at Different Temperatures

    Shklyaev, A. A., Romanyuk, K. N., Kosolobov, S. S. & Latyshev, A. V., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Inc., p. 325-344 20 p.

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

  20. Universality of the (113) Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation

    Fedina, L. I., Gutakovskii, A. K., Latyshev, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Inc., p. 383-407 25 p.

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

  21. 2016
  22. Application of surface-enhanced infrared spectroscopy for steroids analysis

    Cherkasova, O. P., Milekhin, A. G., Milekhin, I. A., Kuznetsov, S. A., Rodyakina, E. E. & Latyshev, A. V., 23 Aug 2016, Proceedings - 2016 International Conference Laser Optics, LO 2016. Institute of Electrical and Electronics Engineers Inc., p. S229 (Proceedings - 2016 International Conference Laser Optics, LO 2016).

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

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