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  1. 1.534 µm Er electroluminescence in the RF magnetron deposited In2O3 : Er films on a Si substrate

    Feklistov, K. V., Lemzyakov, A. G., Abramkin, D. S., Svit, K. A., Pugachev, A. M., Volodin, V. A., Marin, D. V., Spesivsev, E. V., Azarov, I. A., Safronov, L. N., Kochubey, S. A., Ershov, K. S., Kapishnikov, A. V., Shmakov, A. N., Shklyaev, A. A. & Zhivodkov, Y. A., 30 Jun 2026, In: Modern Electronic Materials. 12, 2, p. 95-102 8 p.

    Research output: Contribution to journal › Article › peer-review

  2. Determining the structure of energy in heterostructures with diffuse interfaces

    Abramkin, D. S., Bakarov, A. K., Kolotovkina, D. A., Gutakovskii, A. K. & Shamirzaev, T. S., 1 Sept 2017, In: Bulletin of the Russian Academy of Sciences: Physics. 81, 9, p. 1052-1057 6 p.

    Research output: Contribution to journal › Article › peer-review

  3. Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration

    Petrushkov, M. O., Abramkin, D. S., Emelyanov, E. A., Putyato, M. A., Komkov, O. S., Firsov, D. D., Vasev, A. V., Yesin, M. Y., Bakarov, A. K., Loshkarev, I. D., Gutakovskii, A. K., Atuchin, V. V. & Preobrazhenskii, V. V., 14 Dec 2022, In: Nanomaterials. 12, 24, 4449.

    Research output: Contribution to journal › Article › peer-review

  4. Effect of the Crystallographic Orientation of GaSb Films on Their Structural Properties during MBE Heteroepitaxy on Vicinal Si(001) Substrates

    Petrushkov, M. O., Abramkin, D. S., Emelyanov, E. A., Putyato, M. A., Vasev, A. V., Loshkarev, D. I., Yesin, M. Y., Komkov, O. S., Firsov, D. D. & Preobrazhenskii, V. V., Dec 2020, In: Semiconductors. 54, 12, p. 1548-1554 7 p.

    Research output: Contribution to journal › Article › peer-review

  5. Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy

    Abramkin, D. S., Petrushkov, M. O., Emelyanov, E. A., Nenashev, A. V., Yesin, M. Y., Vasev, A. V., Putyato, M. A., Bogomolov, D. B., Gutakovskiy, A. K. & Preobrazhenskiy, V. V., Feb 2021, In: Semiconductors. 55, 2, p. 194-201 8 p.

    Research output: Contribution to journal › Article › peer-review

  6. Formation of low-dimensional structures in the InSb/AlAs heterosystem

    Abramkin, D. S., Bakarov, A. K., Putyato, M. A., Emelyanov, E. A., Kolotovkina, D. A., Gutakovskii, A. K. & Shamirzaev, T. S., 1 Sept 2017, In: Semiconductors. 51, 9, p. 1233-1239 7 p.

    Research output: Contribution to journal › Article › peer-review

  7. GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates

    Abramkin, D. S., Petrushkov, M. O., Putyato, M. A., Semyagin, B. R., Emelyanov, E. A., Preobrazhenskii, V. V., Gutakovskii, A. K. & Shamirzaev, T. S., 1 Sept 2019, In: Semiconductors. 53, 9, p. 1143-1147 5 p.

    Research output: Contribution to journal › Article › peer-review

  8. Heterostructures with diffused interfaces: Luminescent technique for ascertainment of band alignment type

    Abramkin, D. S., Gutakovskii, A. K. & Shamirzaev, T. S., 21 Mar 2018, In: Journal of Applied Physics. 123, 11, 11 p., 115701.

    Research output: Contribution to journal › Article › peer-review

  9. Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates

    Abramkin, D. S., Petrushkov, M. O., Putyato, M. A., Semyagin, B. R. & Shamirzaev, T. S., 1 Nov 2018, In: Semiconductors. 52, 11, p. 1484-1490 7 p.

    Research output: Contribution to journal › Article › peer-review

  10. Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers

    Abramkin, D. S., Petrushkov, M. O., Emel’yanov, E. A., Putyato, M. A., Semyagin, B. R., Vasev, A. V., Esin, M. Y., Loshkarev, I. D., Gutakovskii, A. K., Preobrazhenskii, V. V. & Shamirzaev, T. S., 1 Mar 2018, In: Optoelectronics, Instrumentation and Data Processing. 54, 2, p. 181-186 6 p.

    Research output: Contribution to journal › Article › peer-review

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