Original languageEnglish
Pages (from-to)1233-1239
Number of pages7
JournalSemiconductors
Volume51
Issue number9
DOIs
Publication statusPublished - 1 Sept 2017

    Research areas

  • MOLECULAR-BEAM EPITAXY, QUANTUM DOTS, HETEROSTRUCTURES, RELAXATION, GROWTH, NANOSTRUCTURES, TRANSITION, INXGA1-XAS, GAAS(001), STRAIN

    OECD FOS+WOS

ID: 9915449