Original languageEnglish
Pages (from-to)1484-1490
Number of pages7
JournalSemiconductors
Volume52
Issue number11
DOIs
Publication statusPublished - 1 Nov 2018

    OECD FOS+WOS

    Research areas

  • ATOMIC-HYDROGEN, SI, EPITAXY, PHOTOLUMINESCENCE, PERFECTION, DEFECTS, LAYERS

ID: 17248310