Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	181-186
Number of pages	6
Journal	Optoelectronics, Instrumentation and Data Processing
Volume	54
Issue number	2
DOIs	https://doi.org/10.3103/S8756699018020103
Publication status	Published - 1 Mar 2018

dislocation filter, epitaxy, low-temperature GaAs, GROWN GAAS, FILMS, COEFFICIENT, MOLECULAR-BEAM EPITAXY, ON-SI, DENSITY REDUCTION, MISFIT, MOCVD, DEPENDENCE

ID: 13924771