1. 2026
  2. Effect of non-stoichiometric germanosilicate glass composition for enhanced photosensitivity of ITO/GeSixOy/Si Schottky diodes in a wide spectral range

    Hamoud, G. A., Kamaev, G. N., Vergnat, M. & Volodin, V. A., 1 Nov 2026, In: Sensors and Actuators, A: Physical. 410, P1, 12 p., 118207.

    Research output: Contribution to journalArticlepeer-review

  3. Способ получения элемента энергонезависимой резистивной памяти

    Володин, В. А., Камаев, Г. Н. & Чэн, Н., 31 Mar 2026, Роспатент - Федеральная служба по интеллектуальной собственности, Patent No. 2859309, 5 Sept 2025, Priority date 5 Sept 2025, Priority No. 2025124516

    Research output: PatentPatent for invention

  4. Программа для моделирования вольтфарадных характеристик структур металл-диэлектрик-полупроводник в случае обеднения

    Володин, В. А., Климов, Б. А. & Попов, Д. К., 20 Mar 2026, Роспатент - Федеральная служба по интеллектуальной собственности, Patent No. 2026617754, 17 Mar 2026, Priority date 17 Mar 2026, Priority No. 2026616882

    Research output: PatentSoftware registration

  5. Short-range order and optical properties of thin GeOx films obtained by thermal evaporation of GeO and GeO2

    Hamoud, G., Samus, A., Matsynin, A., Komogortsev, S., Zhandun, V., Prosvirin, I., Astankova, K., Azarov, I., Geydt, P., Milekhin, I. & Volodin, V., 15 Feb 2026, In: Thin Solid Films. 836, 11 p., 140869.

    Research output: Contribution to journalArticlepeer-review

  6. 2025
  7. Многоуровневая мемристорная структура на основе аморфного кремния

    Камаев, Г. Н., Володин, В. А. & Чэн, Н., 12 Dec 2025, Роспатент - Федеральная служба по интеллектуальной собственности, Patent No. 239675, 5 Sept 2025, Priority date 5 Sept 2025, Priority No. 2025124514

    Research output: PatentPatent for utility model

  8. Charge Transport in MIS Structures ITO/[GeOx](z)[SiO2](1–z)/Si

    Yushkov, I., Gismatulin, A., Kamaev, G., Vergnat, M. & Volodin, V. A., Dec 2025, In: Russian Microelectronics. 54, 8, p. 842-847 6 p.

    Research output: Contribution to journalArticlepeer-review

  9. Investigation of the Conduction Type of Nonstoichiometric Germanosilicate Glass Films

    Hamoud, G. A., Kamaev, G. N., Vergnat, M. & Volodin, V. A., Dec 2025, In: Russian Microelectronics. 54, 8, p. 1088-1096 9 p.

    Research output: Contribution to journalArticlepeer-review

  10. Study of localized phonon in ultrananocrystalline diamond films investigated by Raman spectroscopy

    Kumar, N., Kozakov, A. T., Panda, K., Nikolskii, A. V., Milekhin, I. A., Khamatdinov, E. U., Volodin, V. A., Goryainov, S. V. & Milekhin, A. G., Dec 2025, In: Diamond and Related Materials. 160, 20 p., 112941.

    Research output: Contribution to journalArticlepeer-review

  11. Evaluation of ultrananocrystalline diamond size by UV Raman spectroscopy and a phonon confinement model

    Kumar, N., Panda, K., Kozakov, A. T., Nikolskii, A. V., Volodin, V. A. & Goryainov, S. V., 29 Oct 2025, In: Physical chemistry chemical physics : PCCP. 27, 42, p. 22746-22754 9 p.

    Research output: Contribution to journalArticlepeer-review

  12. Femtosecond Laser Crystallization of Ultrathin a-Ge Films in Multilayer Stacks with Silicon Layers

    Cheng, Y., Bulgakov, A. V., Bulgakova, N. M., Beránek, J., Kacyuba, A. V. & Volodin, V. A., 16 Oct 2025, In: Applied Sciences. 15, 20, p. 11082

    Research output: Contribution to journalArticlepeer-review

  13. Nucleation and structure evolution of InSb nanocrystals during the ion-beam synthesis at the Si/SiO2 interface of a silicon-on-insulator substrate

    Tyschenko, I., Gutakovskii, A., Shvets, P., Goikhman, A., Zhang, R., Vdovin, V., Volodin, V. & Popov, V., Oct 2025, In: Journal of Alloys and Compounds. 1042, 183938.

    Research output: Contribution to journalArticlepeer-review

  14. Optical Phonons in the InSb Nanocrystals Ion-Beam Synthesized at the Bounding Si/SiO$${}_{\mathbf{2}}$$ Interface of Silicon-on-Insulator Structures

    Zhang, R., Tyschenko, I. E., Gutakovskii, A. K., Volodin, V. A. & Popov, V. P., 29 Sept 2025, In: Optoelectronics, Instrumentation and Data Processing. 61, 3, p. 369-375 7 p.

    Research output: Contribution to journalArticlepeer-review

  15. Polymorphic States in the Electron-Beam Exposure-Induced CaSi2 Film Growth at the CaF2 Epitaxy on Si

    Kacyuba, A. V., Dvurechenskii, A. V., Kamaev, G. N. & Volodin, V. A., 10 Sept 2025, In: Journal of Surface Investigation. 19, 2, p. 504-509 6 p.

    Research output: Contribution to journalArticlepeer-review

  16. Kinetic Study of Ge Nanocluster Formation in Composite GeOx[SiO2] Films

    Kislukhin, N. A., Astankova, K. N. & Volodin, V. A., 8 Aug 2025, International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM. IEEE Computer Society, p. 120-124 5 p. (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

  17. Dependence of the Stoichiometry of Poly(vinyl alcohol) Complexes with Lithium Chloride and Bromide on Its Degree of Saponification

    Prosanov, I. Y., Ukhina, A. V., Borisenko, T. A. & Volodin, V. A., 1 Jun 2025, In: Polymer Science - Series A. 66, 5, p. 631-635 5 p.

    Research output: Contribution to journalArticlepeer-review

  18. Influence of Ge nanolayers on the resistive switching effect in amorphous hydrogenated silicon based structures

    Чэн, Ю., Камаев, Г. Н., Попов, А. В. & Володин, В. А., May 2025, In: St. Petersburg State Polytechnical University Journal: Physics and Mathematics. 18, S1.1, p. 134-139 6 p., 23.

    Research output: Contribution to journalConference articlepeer-review

  19. Photosensitive MIS structures based on GeSixOy films

    Hamoud, G. A., Kamaev, G. N., Vergnat, M. & Volodin, V. A., May 2025, In: Optical Materials. 162, 116838.

    Research output: Contribution to journalArticlepeer-review

  20. Carbonaceous Materials’ Raman Scattering Is a Result of Self-SERS Effect

    Prosanov, I. Y. & Volodin, V. A., 14 Apr 2025, In: Physics of the Solid State. 67, 4, p. 290-291 2 p.

    Research output: Contribution to journalArticlepeer-review

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