Influence of Ge nanolayers on the resistive switching effect in amorphous hydrogenated silicon based structures

Original language	English
Pages (from-to)	159
Journal	Научно-технические ведомости СПбГПУ. Физико-математические науки Cанкт-Петербургский политехнический университет Петра Великого ru
Volume	18
Issue number	1.1
DOIs	https://doi.org/10.18721/JPM.181.123
Publication status	Published - May 2025

AMORPHOUS SILICON, GERMANIUM NANOLAYERS, MEMRISTOR, MULTILAYER STRUCTURE, P-I-N STRUCTURE

ID: 71518657