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  1. 2025

  2. Atomic and Electronic Structure of Defect Ni Complexes and Oxygen Vacancies in HfO2 and Their Influence on Charge Transport in Memristors

    Perevalov, T. V., Islamov, D. R. & Chernov, A. A., Sept 2025, In: Journal of Experimental and Theoretical Physics. 141, 1-3, p. 113-119 7 p.

    Research output: Contribution to journal › Article › peer-review

  3. Атомная и электронная структура дефектных комплексов Ni и вакансий кислорода в HfO2 и их влияние на транспорт заряда в мемристорах

    Перевалов, Т. В., Исламов, Д. Р. & Чернов, А. А., 2025, In: Журнал экспериментальной и теоретической физики. 168, 6, p. 882-889

    Research output: Contribution to journal › Article › peer-review

  4. 2024

  5. Electron and hole bipolar injection in magnesium oxide films

    Perevalov, T. V., Islamov, D. R., Zalyalov, T. M., Gismatulin, A. A., Golyashov, V. A., Tereshchenko, O. E., Gorshkov, D. V. & Gritsenko, V. A., 6 Feb 2024, In: Applied Physics Letters. 124, 4, 042903.

    Research output: Contribution to journal › Article › peer-review

  6. Impact of lanthanum doping on the electronic structure of oxygen vacancies in hafnium oxide

    Perevalov, T. V. & Islamov, D. R., 30 Jan 2024, In: Computational Materials Science. 233, 5 p., 112708.

    Research output: Contribution to journal › Article › peer-review

  7. 2023

  8. Mechanism of Transverse Charge Transfer in Thin Films of Hexagonal Boron Nitride

    Islamov, D. R., Perevalov, T. V., Gismatulin, A. A., Azarov, I. A., Spesivtsev, E. V. & Gritsenko, V. A., Mar 2023, In: Journal of Experimental and Theoretical Physics. 136, 3, p. 345-352 8 p.

    Research output: Contribution to journal › Article › peer-review

  9. CPU vs RAM in the Issue of ab initio Simulations of Doped Hafnium Oxide for RRAM and FRAM

    Perevalov, T. V. & Islamov, D. R., 2023, In: Supercomputing Frontiers and Innovations. 10, 3, p. 18-26 9 p.

    Research output: Contribution to journal › Article › peer-review

  10. 2022

  11. Optimal Structure of Lanthanum-Doped Hafnium Oxide: First-Principle Modeling

    Kovzik, V. M., Perevalov, T. V. & Islamov, D. R., 2022, Proceedings of the 2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials, EDM 2022. IEEE Computer Society, p. 11-14 4 p. (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; vol. 2022-June).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  12. 2021

  13. Exact statistical solution for the hopping transport of trapped charge via finite Markov jump processes

    Pil’nik, A. A., Chernov, A. A. & Islamov, D. R., 13 May 2021, In: Scientific Reports. 11, 1, p. 10163 10163.

    Research output: Contribution to journal › Article › peer-review

  14. Influence of the active TaN/ZrOx/Ni memristor layer oxygen content on forming and resistive switching behavior

    Voronkovskii, V. A., Aliev, V. S., Gerasimova, A. K., Perevalov, T. V., Prosvirin, I. P. & Islamov, D. R., 30 Apr 2021, In: Nanotechnology. 32, 18, 185205.

    Research output: Contribution to journal › Article › peer-review

  15. Oxygen vacancies in zirconium oxide as the blue luminescence centres and traps responsible for charge transport: Part I—Crystals

    Islamov, D. R., Gritsenko, V. A., Perevalov, T. V., Yelisseyev, A. P., Pustovarov, V. A., Korolkov, I. V. & Lomonova, E. E., Mar 2021, In: Materialia. 15, 100979.

    Research output: Contribution to journal › Article › peer-review

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