Optimal Structure of Lanthanum-Doped Hafnium Oxide: First-Principle Modeling › Research Explorer

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Optimal Structure of Lanthanum-Doped Hafnium Oxide: First-Principle Modeling

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

Department of Physics

DOI

https://doi.org/10.1109/EDM55285.2022.9855173
Final published version

Valeriya M. Kovzik
Timofey V. Perevalov
Damir R. Islamov

Original language	English
Title of host publication	Proceedings of the 2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials, EDM 2022
Publisher	IEEE Computer Society
Pages	11-14
Number of pages	4
ISBN (Electronic)	9781665498043
ISBN (Print)	9781665498043
DOIs	https://doi.org/10.1109/EDM55285.2022.9855173
Publication status	Published - 2022
Event	23rd IEEE International Conference of Young Professionals in Electron Devices and Materials, EDM 2022 - Altai, Russian Federation Duration: 30 Jun 2022 → 4 Jul 2022

Publication series

Name	International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM
Volume	2022-June
ISSN (Print)	2325-4173
ISSN (Electronic)	2325-419X

Conference

Conference	23rd IEEE International Conference of Young Professionals in Electron Devices and Materials, EDM 2022
Country/Territory	Russian Federation
City	Altai
Period	30.06.2022 → 04.07.2022

OECD FOS+WOS

1.03 PHYSICAL SCIENCES AND ASTRONOMY

Research areas

alloying impurity, density functional theory, electronic structure, hafnium oxide, oxygen vacancy, quantum chemical simulation, resistive memory

ID: 37141511