Mathematical Modeling of Charge Transport in the Dielectric Layer of a HfOx Memristor Taking into Account Single Charged Traps › Research Explorer

DOI

https://doi.org/10.1134/S1063739725601821
Final published version

D. R. Islamov
T. M. Zalyalov
V. A. Voronkovskii
A. K. Markelova
A. A. Pil’nik
T. V. Perevalov
M. N. Davydov
A. A. Chernov

Original language	English
Pages (from-to)	922-928
Number of pages	7
Journal	Russian Microelectronics
Volume	54
Issue number	8
DOIs	https://doi.org/10.1134/S1063739725601821
Publication status	Published - Dec 2025

Research areas

ReRAM, charge transport, hafnium oxide, memristor

OECD FOS+WOS

2.05 MATERIALS ENGINEERING

ID: 75917921