Atomic and Electronic Structure of Defect Ni Complexes and Oxygen Vacancies in HfO2 and Their Influence on Charge Transport in Memristors

Original language	English
Pages (from-to)	113-119
Number of pages	7
Journal	Journal of Experimental and Theoretical Physics
Volume	141
Issue number	1-3
DOIs	https://doi.org/10.1134/S106377612560134X
Publication status	Published - Sept 2025

HfO2 nickel, electronic structure, filament, memristors, oxygen vacancies, quantum chemical simulations, resistive memory

ID: 74616927