Influence of the active TaN/ZrOx/Ni memristor layer oxygen content on forming and resistive switching behavior › Research Explorer

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Influence of the active TaN/ZrO_x/Ni memristor layer oxygen content on forming and resistive switching behavior

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1088/1361-6528/abce7b
Final published version

V. A. Voronkovskii
V. S. Aliev
A. K. Gerasimova
T. V. Perevalov
I. P. Prosvirin
D. R. Islamov

Original language	English
Article number	185205
Journal	Nanotechnology
Volume	32
Issue number	18
Early online date	23 Feb 2021
DOIs	https://doi.org/10.1088/1361-6528/abce7b
Publication status	Published - 30 Apr 2021

Research areas

Forming-free, Memristor, ReRAM, SCLC, XPS, Zirconium oxide

OECD FOS+WOS

2.11 OTHER ENGINEERING AND TECHNOLOGIES
1.04 CHEMICAL SCIENCES
2.05 MATERIALS ENGINEERING

ID: 28141011