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  1. 2024

  2. Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers

    Osinnykh, I. V., Malin, T. V., Milakhin, D. S. & Zhuravlev, K. S., May 2024, In: St. Petersburg State Polytechnical University Journal: Physics and Mathematics. 17, 11, p. 43-48 6 p.

    Research output: Contribution to journal › Conference article › peer-review

  3. Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy

    Malin, T., Maidebura, Y., Mansurov, V., Gavrilova, T., Gutakovsky, A., Vdovin, V., Ponomarev, S., Loshkarev, I., Osinnykh, I., Volodin, V., Milakhin, D. & Zhuravlev, K., 29 Feb 2024, In: Thin Solid Films. 791, 140246.

    Research output: Contribution to journal › Article › peer-review

  4. 2023

  5. Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band

    Igor, O. V., Malin, T. V. & Zhuravlev, K. S., Jun 2023, In: St. Petersburg State Polytechnical University Journal: Physics and Mathematics. 16, 3, p. 33-38 6 p.

    Research output: Contribution to journal › Article › peer-review

  6. 2022

  7. Stimulated emission in heavily doped Al0.68Ga0.32N:Si structures with external cavity

    Bokhan, P. A., Fateev, N. V., Malin, T. V., Osinnykh, I. V., Zakrevsky, D. E. & Zhuravlev, K. S., Dec 2022, In: Journal of Luminescence. 252, 119392.

    Research output: Contribution to journal › Article › peer-review

  8. Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers

    Osinnykh, I. V., Malin, T. V., Kozhukhov, A. S., Ber, B. Y., Kazancev, D. Y. & Zhuravlev, K. S., Jun 2022, In: Semiconductors. 56, 6, p. 352-359 8 p.

    Research output: Contribution to journal › Article › peer-review

  9. 2021

  10. Features of Optical Gain in Heavily Doped Al xGa1 –xN:Si-Structures

    Bokhan, P. A., Zhuravlev, K. S., Zakrevsky, D. E., Malin, T. V., Osinnykh, I. V. & Fateev, N. V., Sept 2021, In: Technical Physics Letters. 47, 9, p. 692-695 4 p.

    Research output: Contribution to journal › Article › peer-review

  11. 2020

  12. Optical gain and stimulated emission in optically pumped heavily doped Al0.74Ga0.26N:Si structures with external cavity

    Bokhan, P. A., Fateev, N. V., Malin, T. V., Osinnykh, I. V., Zakrevsky, D. E. & Zhuravlev, K. S., Jul 2020, In: Optical Materials. 105, 5 p., 109879.

    Research output: Contribution to journal › Article › peer-review

  13. 2019

  14. Optical Gain in Heavily Doped AlxGa1 – xN:Si Structures

    Bokhan, P. A., Zhuravlev, K. S., Zakrevsky, D. E., Malin, T. V., Osinnykh, I. V. & Fateev, N. V., 1 Sept 2019, In: Technical Physics Letters. 45, 9, p. 951-954 4 p.

    Research output: Contribution to journal › Article › peer-review

  15. Donor-acceptor pair emission via defects with strong electron-phonon coupling in heavily doped AlxGa1-xN:Si layers with Al content x > 0.5

    Osinnykh, I. V., Malin, T. V., Milakhin, D. S., Plyusnin, V. F. & Zhuravlev, K. S., 1 Jun 2019, In: Japanese Journal of Applied Physics. 58, SC, 7 p., 27.

    Research output: Contribution to journal › Article › peer-review

  16. 2018

  17. Luminescence properties of heavily doped AlxGa1-xN/AlN films grown on sapphire substrate

    Bokhan, P. A., Fateev, N. V., Malin, T. V., Osinnykh, I. V., Zakrevsky, D. E. & Zhuravlev, K. S., 1 Nov 2018, In: Journal of Luminescence. 203, p. 127-134 8 p.

    Research output: Contribution to journal › Article › peer-review

  18. Determination of the energy structure of recombination centers in heavily doped AlxGa1-xN: Si epitaxial layers with x > 0.5

    Osinnykh, I. V., Malin, T. V. & Zhuravlev, K. S., 10 Apr 2018, In: Journal of Physics: Conference Series. 993, 1, 6 p., 012006.

    Research output: Contribution to journal › Conference article › peer-review

  19. Light emission of heavily doped AlGaN structures under optical pumping

    Bokhan, P. A., Fateev, N. V., Osinnykh, I. V., Malin, T. V., Zakrevsky, D. E., Zhuravlev, K. S., Wei, X., Li, J. & Chen, L., 1 Apr 2018, In: Journal of Semiconductors. 39, 4, 6 p., 043002.

    Research output: Contribution to journal › Article › peer-review

  20. Amplified luminescence of heavily doped AlxGa1-xN structures under optical pumping

    Bokhan, P. A., Zhuravlev, K. S., Zakrevskii, D. E., Malin, T. V., Osinnykh, I. V. & Fateev, N. V., 1 Jan 2018, In: Quantum Electronics. 48, 3, p. 215-221 7 p.

    Research output: Contribution to journal › Article › peer-review

  21. 2017

  22. Properties of intensive defect-related band in photoluminescence spectra of heavily doped AlxGa1-xN: Si layers

    Osinnykh, I. V., Malin, T. V., Plyusnin, V. F. & Zhuravlev, K. S., 15 Aug 2017, In: Journal of Physics: Conference Series. 864, 1, 5 p., 012071.

    Research output: Contribution to journal › Article › peer-review

  23. Nature of intensive defect-related broadband luminescence of heavily doped AlxGa1-xN: Si layers

    Osinnykh, I. V., Malin, T. V., Plyusnin, V. F., Zhuravlev, K. S., Ber, B. Y. & Kazantsev, D. Y., 11 Apr 2017, In: Journal of Physics: Conference Series. 816, 1, 6 p., 012002.

    Research output: Contribution to journal › Article › peer-review

  24. Radiation enhancement in doped AlGaN-structures upon optical pumping

    Bokhan, P. A., Zhuravlev, K. S., Zakrevsky, D. E., Malin, T. V., Osinnykh, I. V. & Fateev, N. V., 1 Jan 2017, In: Technical Physics Letters. 43, 1, p. 46-49 4 p.

    Research output: Contribution to journal › Article › peer-review

ID: 3487138