Research output

1. Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers

   Research output: Contribution to journal › Conference article › peer-review

2. Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy

   Research output: Contribution to journal › Article › peer-review

3. Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band

   Research output: Contribution to journal › Article › peer-review

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