Original languageEnglish
Pages (from-to)951-954
Number of pages4
JournalTechnical Physics Letters
Volume45
Issue number9
DOIs
Publication statusPublished - 1 Sept 2019

    OECD FOS+WOS

    Research areas

  • AlGa N/AlN, gain characteristics, heavily doped structures, AlxGa1-xN/AlN

ID: 21858528