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Stimulated emission in heavily doped Al_0.68Ga_0.32N:Si structures with external cavity

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1016/j.jlumin.2022.119392
Final published version

P. A. Bokhan
N. V. Fateev
T. V. Malin
I. V. Osinnykh
D. E. Zakrevsky
K. S. Zhuravlev

Original language	English
Article number	119392
Journal	Journal of Luminescence
Volume	252
DOIs	https://doi.org/10.1016/j.jlumin.2022.119392
Publication status	Published - Dec 2022

OECD FOS+WOS

1.06 BIOLOGICAL SCIENCES
1.03 PHYSICAL SCIENCES AND ASTRONOMY
1.04 CHEMICAL SCIENCES

Research areas

Donor-acceptor pair transitions, Doped AlGaN structure, Electron-acceptor transitions, External cavity, Optical gain, Stimulated emission

ID: 38163382