Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers

Research output: Contribution to journal › Article › peer-review

Translated title of the contribution	Трансформация N-полярных инверсных доменов из буферных слоев AlN в процессе роста слоев AlGaN
Original language	English
Pages (from-to)	352-359
Number of pages	8
Journal	Semiconductors
Volume	56
Issue number	6
DOIs	https://doi.org/10.1134/S1063782622070077
Publication status	Published - Jun 2022

A nitrides, ammonia-assisted MBE, inversion domains, structural defects, A3 nitrides

ID: 37069995