Donor-acceptor pair emission via defects with strong electron-phonon coupling in heavily doped AlxGa1-xN:Si layers with Al content x

Original language	English
Article number	27
Number of pages	7
Journal	Japanese Journal of Applied Physics
Volume	58
Issue number	SC
DOIs	https://doi.org/10.7567/1347-4065/ab0f1f
Publication status	Published - 1 Jun 2019

SI DONORS, GAN, GROWTH, RECOMBINATION, SPECTROSCOPY, TEMPERATURE, CONDUCTION, CENTERS, ENERGY

ID: 21256198

Donor-acceptor pair emission via defects with strong electron-phonon coupling in heavily doped AlxGa1-xN:Si layers with Al content x > 0.5