Luminescence properties of heavily doped AlxGa1-xN/AlN films grown on sapphire substrate › Research Explorer

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Luminescence properties of heavily doped Al_xGa_1-xN/AlN films grown on sapphire substrate

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1016/j.jlumin.2018.06.034
Final published version

P. A. Bokhan
N. V. Fateev
T. V. Malin
I. V. Osinnykh
Dm E. Zakrevsky
K. S. Zhuravlev

Original language	English
Pages (from-to)	127-134
Number of pages	8
Journal	Journal of Luminescence
Volume	203
DOIs	https://doi.org/10.1016/j.jlumin.2018.06.034
Publication status	Published - 1 Nov 2018

Research areas

Amplified spontaneous emission, Donor-acceptor pair transitions, Optical gain, Photoluminescence, Spontaneous emission, STIMULATED-EMISSION, ALN, OPTICAL GAIN

OECD FOS+WOS

ID: 14102720