Amplified luminescence of heavily doped AlxGa1-xN structures under optical pumping › Research Explorer

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Amplified luminescence of heavily doped Al_xGa_1-xN structures under optical pumping

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1070/QEL16529
Final published version

P. A. Bokhan
K. S. Zhuravlev
D. E. Zakrevskii
T. V. Malin
I. V. Osinnykh
N. V. Fateev

Original language	English
Pages (from-to)	215-221
Number of pages	7
Journal	Quantum Electronics
Volume	48
Issue number	3
DOIs	https://doi.org/10.1070/QEL16529
Publication status	Published - 1 Jan 2018

Research areas

Gain, Luminescence, Optical pumping, Spontaneous emission, luminescence, GAN, optical pumping, LENGTH, spontaneous emission, BAND SUPERLUMINESCENT DIODES, gain

OECD FOS+WOS

ID: 13668336