DOI

Translated title of the contributionВлияние температуры роста на фотолюминесцентные свойства слоев GaN-on-Si, выращенных методом NH3-МЛЭ
Original languageEnglish
Pages (from-to)43-48
Number of pages6
JournalSt. Petersburg State Polytechnical University Journal: Physics and Mathematics
Volume17
Issue number11
DOIs
Publication statusPublished - May 2024

    OECD FOS+WOS

  • 1.03 PHYSICAL SCIENCES AND ASTRONOMY

    Research areas

  • GaN, ammonia-MBE, heterostructures, photoluminescence, point defects

ID: 60746930