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  1. Electromigration effect on the surface morphology during the Ge deposition on Si(1 1 1) at high temperatures

    Shklyaev, A. A. & Latyshev, A. V., 28 Jan 2019, In: Applied Surface Science. 465, p. 10-14 5 p.

    Research output: Contribution to journal › Article › peer-review

  2. Electronic structure and charge transport mechanism in a forming-free SiOx-based memristor

    Gismatulin, A. A., Voronkovskii, V. A., Kamaev, G. N., Novikov, Y. N., Kruchinin, V. N., Krivyakin, G. K., Gritsenko, V. A., Prosvirin, I. P. & Chin, A., 11 Dec 2020, In: Nanotechnology. 31, 50, 10 p., 505704.

    Research output: Contribution to journal › Article › peer-review

  3. Electronic structure and nanoscale potential fluctuations in strongly nonstoichiometric PECVD SiOx

    Perevalov, T. V., Volodin, V. A., Kamaev, G. N., Krivyakin, G. K., Gritsenko, V. A. & Prosvirin, I. P., 1 Feb 2020, In: Journal of Non-Crystalline Solids. 529, 4 p., 119796.

    Research output: Contribution to journal › Article › peer-review

  4. Electron Spin Resonance in Heterostructures with Ring Molecules of GeSi Quantum Dots

    Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Shklyaev, A. A., Kulik, L. V. & Dvurechenskii, A. V., Jan 2021, In: JETP Letters. 113, 1, p. 52-56 5 p.

    Research output: Contribution to journal › Article › peer-review

  5. Electron-Stimulated Aluminum Nitride Crystalline Phase Formation on the Sapphire Surface

    Milakhin, D., Malin, T., Mansurov, V., Galitsyn, Y. & Zhuravlev, K., 1 Jun 2019, In: Physica Status Solidi (B) Basic Research. 256, 6, 5 p., 1800516.

    Research output: Contribution to journal › Article › peer-review

  6. Erratum: Fabrication of microcrystalline NaPbLa(WO4)3:Yb3+/Ho3+ phosphors and their upconversion photoluminescent characteristics [Korean J. Mater. Res., 29 (2019) (741)] DOI:10.3740/MRSK.2019.29.12.741

    Lim, C. S., Atuchin, V. V., Aleksandrovsky, A. S., Denisenko, Y. G., Molokeev, M. S. & Oreshonkov, A. S., Jan 2020, In: Korean Journal of Materials Research. 30, 1, p. 50-50 1 p.

    Research output: Contribution to journal › Comment/debate › peer-review

  7. Evolution of the atomic and electronic structures during nitridation of the Si(1 1 1) surface under ammonia flux

    Mansurov, V., Galitsyn, Y., Malin, T., Teys, S., Milakhin, D. & Zhuravlev, K., 1 Jan 2022, In: Applied Surface Science. 571, 151276.

    Research output: Contribution to journal › Article › peer-review

  8. Evolution of the surface states during the in situ SiN layer formation on AlN/GaN heterostructures

    Zhuravlev, K., Mansurov, V., Galitsyn, Y., Malin, T., Milakhin, D. & Zemlyakov, V., 28 May 2020, In: Semiconductor Science and Technology. 35, 7, 6 p., 075004.

    Research output: Contribution to journal › Article › peer-review

  9. Exceedingly high performance top-gate p-type sno thin film transistor with a nanometer scale channel layer

    Yen, T. J., Chin, A. & Gritsenko, V., Jan 2021, In: Nanomaterials. 11, 1, p. 1-11 11 p., 92.

    Research output: Contribution to journal › Article › peer-review

  10. Exploration of the Structural and Vibrational Properties of the Ternary Molybdate Tl5BiHf(MoO4)6with Isolated MoO4Units and Tl+Conductivity

    Grossman, V., Adichtchev, S. V., Atuchin, V. V., Bazarov, B. G., Bazarova, J. G., Kuratieva, N., Oreshonkov, A. S., Pervukhina, N. V. & Surovtsev, N. V., 8 Sept 2020, In: Inorganic Chemistry. 59, 17, p. 12681-12689 9 p.

    Research output: Contribution to journal › Article › peer-review

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