Evolution of the surface states during the in situ SiN layer formation on AlN/GaN heterostructures

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	075004
Number of pages	6
Journal	Semiconductor Science and Technology
Volume	35
Issue number	7
DOIs	https://doi.org/10.1088/1361-6641/ab7e44
Publication status	Published - 28 May 2020

AlN/GaN heterostructure, current collapse, GaN-enhancement-mode high electron mobility transistor (E-HEMT), SiN-passivation, surface states, POWER PERFORMANCE, AlN, SEMICONDUCTOR, PASSIVATION, GaN-enhancement-mode high electron, GAN(0001) SURFACE, MODEL, CURRENT COLLAPSE, ALGAN/GAN, mobility transistor (E-HEMT), GaN heterostructure, HEMTS, SCANNING-TUNNELING-MICROSCOPY, CHARGE

ID: 24538134