DOI

  • Andrei A. Gismatulin
  • Vitalii A. Voronkovskii
  • Gennadiy N. Kamaev
  • Yuriy N. Novikov
  • Vladimir N. Kruchinin
  • Grigory K. Krivyakin
  • Vladimir A. Gritsenko
  • Igor P. Prosvirin
  • Albert Chin
Original languageEnglish
Article number505704
Number of pages10
JournalNanotechnology
Volume31
Issue number50
DOIs
Publication statusPublished - 11 Dec 2020

    Research areas

  • Charge transport mechanism, Electronic structure, Memristor, SiOx, PHOTOLUMINESCENCE, FIELD, DEVICE, RERAM, charge transport mechanism, SILICON-OXIDE, memristor, electronic structure, RESISTANCE, CONDUCTION

    OECD FOS+WOS

ID: 25674561