TY - JOUR

T1 - Chemical Composition, Structure, and Physical Properties of AlN Films Produced via Pulsed DC Reactive Magnetron Sputtering

AU - Shayapov, Vladimir R.

AU - Bogoslovtseva, Alena L.

AU - Chepkasov, Sergey Yu

AU - Asanov, Igor P.

AU - Maksimovskiy, Evgeny A.

AU - Kapishnikov, Aleksandr V.

AU - Mironova, Maria I.

AU - Lapega, Alina V.

AU - Geydt, Pavel V.

N1 - The authors acknowledge the Shared Research Center “VTAN” of the Novosibirsk State University, supported by Minobrnauki of Russia, under agreement #075-12-2021-697. The authors are thankful to A. O. Geydt for assistance with manuscript translation, V. A. Volodin for valuable discussions on optical measurements, and acknowledge the late A. S. Zolkin for their invaluable efforts in building the dielectric film growth setup.

PY - 2023/7

Y1 - 2023/7

N2 - The chemical composition, structure, and physical properties of aluminum nitride (AlN) films obtained using pulsed DC reactive magnetron sputtering in asymmetric bipolar mode have been studied. X-ray diffraction and electron diffraction confirmed the composition of c–axis textured hexagonal AlN films required for piezoelectric applications. The surface of the films obtained is quite smooth; the arithmetic average roughness does not exceed 2 nm. Transmission electron microscopy has shown the presence of a transition layer at the film–substrate interface. Transmission electron microscopy and X-ray photoelectron spectroscopy depth profile analysis have shown that the films have an oxidized surface layer which has an influence on the optical model of the films derived from ellipsometric data. However, it does not significantly influence the films’ piezoresponse. Piezoelectric force microscopy indicated a piezoelectric effect in the films that is uniform over their surface.

AB - The chemical composition, structure, and physical properties of aluminum nitride (AlN) films obtained using pulsed DC reactive magnetron sputtering in asymmetric bipolar mode have been studied. X-ray diffraction and electron diffraction confirmed the composition of c–axis textured hexagonal AlN films required for piezoelectric applications. The surface of the films obtained is quite smooth; the arithmetic average roughness does not exceed 2 nm. Transmission electron microscopy has shown the presence of a transition layer at the film–substrate interface. Transmission electron microscopy and X-ray photoelectron spectroscopy depth profile analysis have shown that the films have an oxidized surface layer which has an influence on the optical model of the films derived from ellipsometric data. However, it does not significantly influence the films’ piezoresponse. Piezoelectric force microscopy indicated a piezoelectric effect in the films that is uniform over their surface.

KW - acoustic resonator layer

KW - aluminum nitride films

KW - hexagonal structure

KW - magnetron sputtering

KW - piezoelectric force microscopy

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85166261172&origin=inward&txGid=e0b2b48a0d9925cb788f576655306160

UR - https://www.mendeley.com/catalogue/5054f30a-80de-37da-9b0c-939e4624ce43/

U2 - 10.3390/coatings13071281

DO - 10.3390/coatings13071281

M3 - Article

VL - 13

JO - Coatings

JF - Coatings

SN - 2079-6412

IS - 7

M1 - 1281

ER -