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  1. Gold-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide

    Lunev, N. A., Zamchiy, A. O., Baranov, E. A., Merkulova, I. E., Konstantinov, V. O., Korolkov, I. V., Maximovskiy, E. A. & Volodin, V. A., Oct 2021, In: Technical Physics Letters. 47, 10, p. 726-729 4 p.

    Research output: Contribution to journal › Article › peer-review

  2. Ge nanocrystals formed by furnace annealing of Ge(x)[SiO2](1-x) films: Structure and optical properties

    Volodin, V. A., Cherkov, A. G., Antonenko, A. K., Stoffel, M., Rinnert, H. & Vergnat, M., 1 Jul 2017, In: Materials Research Express. 4, 7, 9 p., 075010.

    Research output: Contribution to journal › Article › peer-review

  3. Formation of SnO and SnO2 phases during the annealing of SnO(x) films obtained by molecular beam epitaxy

    Nikiforov, A., Timofeev, V., Mashanov, V., Azarov, I., Loshkarev, I., Volodin, V., Gulyaev, D., Chetyrin, I. & Korolkov, I., 15 May 2020, In: Applied Surface Science. 512, 7 p., 145735.

    Research output: Contribution to journal › Article › peer-review

  4. Formation of light-emitting defects in silicon by swift heavy ion irradiation and subsequent annealing

    Cherkova, S. G., Volodin, V. A., Skuratov, V. A., Stoffel, M., Rinnert, H. & Vergnat, M., Feb 2023, In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 535, p. 132-136 5 p.

    Research output: Contribution to journal › Article › peer-review

  5. Formation of germanium nanocrystals and amorphous nanoclusters in GeSiOx films using electron beam annealing

    Zhang, F., Volodin, V. A., Baranov, E. A., Konstantinov, V. O., Shchukin, V. G., Zamchiy, A. O. & Vergnat, M., Mar 2022, In: Vacuum. 197, 110796.

    Research output: Contribution to journal › Article › peer-review

  6. Formation of Germanium Nanocrystals and Amorphous Nanoclusters in GeO[SiO] and GeO[SiO2] Films Using Electron Beam Annealing

    Konstantinov, V. O., Baranov, E. A., Fan, Z., Shchukin, V. G., Zamchiy, A. O. & Volodin, V. A., 18 Sept 2024, In: Technical Physics. 69, 4, p. 898-905 8 p.

    Research output: Contribution to journal › Article › peer-review

  7. Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region

    Krivyakin, G. K., Volodin, V. A., Shklyaev, A. A., Mortet, V., More-Chevalier, J., Ashcheulov, P., Remes, Z., Stuchliková, T. H. & Stuchlik, J., 1 Oct 2017, In: Semiconductors. 51, 10, p. 1370-1376 7 p.

    Research output: Contribution to journal › Article › peer-review

  8. Forbidden Resonant Raman Scattering in GaAs/AlAs Superlattices: Experiment and Calculations

    Volodin, V. A., Sachkov, V. A. & Sinyukov, M. P., 1 Jun 2018, In: Semiconductors. 52, 6, p. 717-722 6 p.

    Research output: Contribution to journal › Article › peer-review

  9. Femtosecond Laser Annealing of Multilayer Thin-Film Structures Based on Amorphous Germanium and Silicon

    Kolchin, A. V., Shuleiko, D. V., Pavlikov, A. V., Zabotnov, S. V., Golovan, L. A., Presnov, D. E., Volodin, V. A., Krivyakin, G. K., Popov, A. A. & Kashkarov, P. K., 1 Jun 2020, In: Technical Physics Letters. 46, 6, p. 560-563 4 p.

    Research output: Contribution to journal › Article › peer-review

  10. Fabrication of polycrystalline silicon thin films from a-SiOx via the inverted aluminum-induced layer exchange process

    Zamchiy, A. O., Baranov, E. A., Maximovskiy, E. A., Volodin, V. A., Vdovin, V. I., Gutakovskii, A. K. & Korolkov, I. V., 15 Feb 2020, In: Materials Letters. 261, 4 p., 127086.

    Research output: Contribution to journal › Article › peer-review

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