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  1. Ion-Beam Synthesis of the Crystalline Ge Phase in SiOxNy Films upon Annealing under High Pressure

    Tyschenko, I. E., Krivyakin, G. K. & Volodin, V. A., 1 Feb 2018, In: Semiconductors. 52, 2, p. 268-272 5 p.

    Research output: Contribution to journal › Article › peer-review

  2. Interaction of low-fluence femtosecond laser pulses with a composite layer containing Ge nanoclusters: A novel type of nanofoam formation

    Astankova, K. N., Kozhukhov, A. S., Krivyakin, G. K., Zhivodkov, Y. A., Sheglov, D. V. & Volodin, V. A., 1 May 2022, In: Journal of Laser Applications. 34, 2, 022002.

    Research output: Contribution to journal › Article › peer-review

  3. Infrared photoluminescence from GeO[SiO2] and GeO[SiO] solid alloy layers irradiated with swift heavy Xe ions

    Cherkova, S. G., Volodin, V. A., Skuratov, V. A., Stoffel, M., Rinnert, H. & Vergnat, M., Jul 2020, In: Journal of Luminescence. 223, 4 p., 117238.

    Research output: Contribution to journal › Article › peer-review

  4. Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy

    Malin, T., Maidebura, Y., Mansurov, V., Gavrilova, T., Gutakovsky, A., Vdovin, V., Ponomarev, S., Loshkarev, I., Osinnykh, I., Volodin, V., Milakhin, D. & Zhuravlev, K., 29 Feb 2024, In: Thin Solid Films. 791, 140246.

    Research output: Contribution to journal › Article › peer-review

  5. Influence of Ge nanolayers on the resistive switching effect in amorphous hydrogenated silicon based structures

    Чэн, Ю., Камаев, Г. Н., Попов, А. В. & Володин, В. А., May 2025, In: St. Petersburg State Polytechnical University Journal: Physics and Mathematics. 18, S1.1, p. 134-139 6 p., 23.

    Research output: Contribution to journal › Conference article › peer-review

  6. Influence of Current Density on the Structure of Amorphous Silicon Suboxide Thin Films Under Electron-Beam Annealing

    Baranov, E. A., Nepomnyashchikh, V. A., Konstantinov, V. O., Shchukin, V. G., Merkulova, I. E., Zamchiy, A. O., Lunev, N. A., Volodin, V. A. & Shapovalova, A. A., Oct 2023, In: Journal of Applied Mechanics and Technical Physics. 64, 5, p. 778-783 6 p.

    Research output: Contribution to journal › Article › peer-review

  7. Indium-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide

    Zamchiy, A. O., Baranov, E. A., Merkulova, I. E., Lunev, N. A., Volodin, V. A. & Maksimovskii, E. A., 1 Jun 2020, In: Technical Physics Letters. 46, 6, p. 583-586 4 p.

    Research output: Contribution to journal › Article › peer-review

  8. High-Temperature PIN Diodes Based on Amorphous Hydrogenated Silicon-Carbon Alloys and Boron-Doped Diamond Thin Films

    Stuchlikova, T. H., Stuchlik, J., Remes, Z., Taylor, A., Mortet, V., Ashcheulov, P., Gregora, I., Krivyakin, G. & Volodin, V., 1 Jun 2020, In: Physica Status Solidi (B) Basic Research. 257, 6, 6 p., 1900247.

    Research output: Contribution to journal › Article › peer-review

  9. HIGH-TEMPERATURE ANNEALING OF SILICON SUBOXIDE THIN FILMS OBTAINED BY GAS-JET ELECTRON BEAM PLASMA CHEMICAL VAPOR DEPOSITION

    Baranov, E. A., Zamchiy, A. O., Lunev, N. A., Merkulova, I. E., Volodin, V. A., Sharafutdinov, M. R. & Shapovalova, A. A., 6 Feb 2023, In: Journal of Applied Mechanics and Technical Physics. 63, 5, p. 757-764 8 p.

    Research output: Contribution to journal › Article › peer-review

  10. Growth of Silicene by Molecular Beam Epitaxy on CaF2/Si(111) Substrates Modified by Electron Irradiation

    Zinovieva, A. F., Zinovyev, V. A., Katsyuba, A. V., Volodin, V. A., Muratov, V. I. & Dvurechenskii, A. V., May 2024, In: JETP Letters. 119, 9, p. 703-707 5 p.

    Research output: Contribution to journal › Article › peer-review

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