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  1. Kinetic Study of Ge Nanocluster Formation in Composite GeOx[SiO2] Films

    Kislukhin, N. A., Astankova, K. N. & Volodin, V. A., 8 Aug 2025, International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM. IEEE Computer Society, p. 120-124 5 p. (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  2. IR Photoluminescence of Silicon Irradiated with High-Energy Xe Ions after Annealing

    Cherkova, S. G., Volodin, V. A., Skuratov, V. A., Stoffel, M., Rinnert, H. & Vergnat, M., 2022, In: Optoelectronics, Instrumentation and Data Processing. 58, 6, p. 633-642 10 p.

    Research output: Contribution to journal › Article › peer-review

  3. Ion-Beam Synthesis of the Crystalline Ge Phase in SiOxNy Films upon Annealing under High Pressure

    Tyschenko, I. E., Krivyakin, G. K. & Volodin, V. A., 1 Feb 2018, In: Semiconductors. 52, 2, p. 268-272 5 p.

    Research output: Contribution to journal › Article › peer-review

  4. Investigation of the Conduction Type of Nonstoichiometric Germanosilicate Glass Films

    Hamoud, G. A., Kamaev, G. N., Vergnat, M. & Volodin, V. A., Dec 2025, In: Russian Microelectronics. 54, 8, p. 1088-1096 9 p.

    Research output: Contribution to journal › Article › peer-review

  5. Interaction of low-fluence femtosecond laser pulses with a composite layer containing Ge nanoclusters: A novel type of nanofoam formation

    Astankova, K. N., Kozhukhov, A. S., Krivyakin, G. K., Zhivodkov, Y. A., Sheglov, D. V. & Volodin, V. A., 1 May 2022, In: Journal of Laser Applications. 34, 2, 022002.

    Research output: Contribution to journal › Article › peer-review

  6. Infrared photoluminescence from GeO[SiO2] and GeO[SiO] solid alloy layers irradiated with swift heavy Xe ions

    Cherkova, S. G., Volodin, V. A., Skuratov, V. A., Stoffel, M., Rinnert, H. & Vergnat, M., Jul 2020, In: Journal of Luminescence. 223, 4 p., 117238.

    Research output: Contribution to journal › Article › peer-review

  7. Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy

    Malin, T., Maidebura, Y., Mansurov, V., Gavrilova, T., Gutakovsky, A., Vdovin, V., Ponomarev, S., Loshkarev, I., Osinnykh, I., Volodin, V., Milakhin, D. & Zhuravlev, K., 29 Feb 2024, In: Thin Solid Films. 791, 140246.

    Research output: Contribution to journal › Article › peer-review

  8. Influence of Ge nanolayers on the resistive switching effect in amorphous hydrogenated silicon based structures

    Чэн, Ю., Камаев, Г. Н., Попов, А. В. & Володин, В. А., May 2025, In: St. Petersburg State Polytechnical University Journal: Physics and Mathematics. 18, S1.1, p. 134-139 6 p., 23.

    Research output: Contribution to journal › Conference article › peer-review

  9. Influence of Current Density on the Structure of Amorphous Silicon Suboxide Thin Films Under Electron-Beam Annealing

    Baranov, E. A., Nepomnyashchikh, V. A., Konstantinov, V. O., Shchukin, V. G., Merkulova, I. E., Zamchiy, A. O., Lunev, N. A., Volodin, V. A. & Shapovalova, A. A., Oct 2023, In: Journal of Applied Mechanics and Technical Physics. 64, 5, p. 778-783 6 p.

    Research output: Contribution to journal › Article › peer-review

  10. Indium-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide

    Zamchiy, A. O., Baranov, E. A., Merkulova, I. E., Lunev, N. A., Volodin, V. A. & Maksimovskii, E. A., 1 Jun 2020, In: Technical Physics Letters. 46, 6, p. 583-586 4 p.

    Research output: Contribution to journal › Article › peer-review

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