IR Photoluminescence of Silicon Irradiated with High-Energy Xe Ions after Annealing › Research Explorer

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IR Photoluminescence of Silicon Irradiated with High-Energy Xe Ions after Annealing

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.3103/S8756699022060024
Final published version

S. G. Cherkova
V. A. Volodin
V. A. Skuratov
M. Stoffel
H. Rinnert
M. Vergnat

Original language	English
Pages (from-to)	633-642
Number of pages	10
Journal	Optoelectronics, Instrumentation and Data Processing
Volume	58
Issue number	6
DOIs	https://doi.org/10.3103/S8756699022060024
Publication status	Published - 2022

OECD FOS+WOS

2.02 ELECTRICAL ENG, ELECTRONIC ENG
1.03 PHYSICAL SCIENCES AND ASTRONOMY

Research areas

defects in silicon, photoluminescence, swift heavy ions

ID: 55694252