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  1. Light-emitting Si nanostructures formed by swift heavy ions in a-Si:H/SiO2 multilayer heterostructures

    Cherkova, S. G., Volodin, V. A., Cherkov, A. G., Antonenko, A. K., Kamaev, G. N. & Skuratov, V. A., 1 Aug 2017, In: Materials Research Express. 4, 8, 7 p., 085001.

    Research output: Contribution to journal › Article › peer-review

  2. Light-emitting defects formed in GeO/SiO2 heterostructures with assistance of swift heavy ions

    Cherkova, S. G., Volodin, V. A., Skuratov, V. A., Stoffel, M., Rinnert, H. & Vergnat, M., 1 Mar 2019, In: Journal of Luminescence. 207, p. 209-212 4 p.

    Research output: Contribution to journal › Article › peer-review

  3. Layer exchange during aluminum-induced crystallization of silicon suboxide thin films

    Zamchiy, A. O., Baranov, E. A., Merkulova, I. E., Korolkov, I. V., Vdovin, V. I., Gutakovskii, A. K. & Volodin, V. A., 15 Jun 2021, In: Materials Letters. 293, 129723.

    Research output: Contribution to journal › Article › peer-review

  4. Laser annealing of epitaxial CaF2 films on Si

    Dvurechenskii, A. V., Smagina, Z. V., Volodin, V. A., Kacyuba, A. V., Zinovyev, V. A., Ivlev, G. D. & Prakopyeu, S. L., 1 Oct 2021, In: Thin Solid Films. 735, 138898.

    Research output: Contribution to journal › Article › peer-review

  5. Kinetic study of GeOx amorphous film disproportionation into a-Ge nanoclusters / GeO2 system using Raman and infrared spectroscopy

    帆张, Володин, В. А., Астанкова, К. Н., Shvets, P. V., Goikhman, A. Y. & Vergnat, M., 1 May 2024, In: Journal of Non-Crystalline Solids. 631, 8 p., 122929.

    Research output: Contribution to journal › Article › peer-review

  6. IR Photoluminescence of Silicon Irradiated with High-Energy Xe Ions after Annealing

    Cherkova, S. G., Volodin, V. A., Skuratov, V. A., Stoffel, M., Rinnert, H. & Vergnat, M., 2022, In: Optoelectronics, Instrumentation and Data Processing. 58, 6, p. 633-642 10 p.

    Research output: Contribution to journal › Article › peer-review

  7. Ion-Beam Synthesis of the Crystalline Ge Phase in SiOxNy Films upon Annealing under High Pressure

    Tyschenko, I. E., Krivyakin, G. K. & Volodin, V. A., 1 Feb 2018, In: Semiconductors. 52, 2, p. 268-272 5 p.

    Research output: Contribution to journal › Article › peer-review

  8. Interaction of low-fluence femtosecond laser pulses with a composite layer containing Ge nanoclusters: A novel type of nanofoam formation

    Astankova, K. N., Kozhukhov, A. S., Krivyakin, G. K., Zhivodkov, Y. A., Sheglov, D. V. & Volodin, V. A., 1 May 2022, In: Journal of Laser Applications. 34, 2, 022002.

    Research output: Contribution to journal › Article › peer-review

  9. Infrared photoluminescence from GeO[SiO2] and GeO[SiO] solid alloy layers irradiated with swift heavy Xe ions

    Cherkova, S. G., Volodin, V. A., Skuratov, V. A., Stoffel, M., Rinnert, H. & Vergnat, M., Jul 2020, In: Journal of Luminescence. 223, 4 p., 117238.

    Research output: Contribution to journal › Article › peer-review

  10. Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy

    Malin, T., Maidebura, Y., Mansurov, V., Gavrilova, T., Gutakovsky, A., Vdovin, V., Ponomarev, S., Loshkarev, I., Osinnykh, I., Volodin, V., Milakhin, D. & Zhuravlev, K., 29 Feb 2024, In: Thin Solid Films. 791, 140246.

    Research output: Contribution to journal › Article › peer-review

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