Memristors Based on Many-Layer Non-Stoichiometric Germanosilicate Glass Films › Research Explorer

DOI

https://doi.org/10.3390/electronics12040873
Final published version

Ivan D. Yushkov
Liping Yin
Gennadiy N. Kamaev
Igor P. Prosvirin
Pavel V. Geydt
Michel Vergnat
Vladimir A. Volodin

Original language	English
Article number	873
Journal	Electronics (Switzerland)
Volume	12
Issue number	4
DOIs	https://doi.org/10.3390/electronics12040873
Publication status	Published - Feb 2023

OECD FOS+WOS

2.02.IQ ENGINEERING, ELECTRICAL & ELECTRONIC
1.03.UB PHYSICS, APPLIED

Research areas

germanium, germanosilicate glass, memristor, resistance states, thin films

ID: 55434942