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  1. 2023

  2. Полупроводники и нанотехнологии

    Асеев, А. Л., 2023, Сборник тезисов: Школа молодых ученых «Актуальные проблемы полупроводниковых наносистем¬.

    Research output: Chapter in Book/Report/Conference proceeding › Article in an anthology › peer-review

  3. 2022

  4. Аналитический и технологический исследовательский центр "Высокие технологии и наноструктурированные материалы" ФФ НГУ: история, становление и достигнутые результаты

    Гейдт, П. В., Аржанников, А. В., Асеев, А. Л., Шкляев, А. А., Володин, В. А., Азаров, И. А., Зайковский, В. И., Utkin, D., Ларичев, Ю. В., Чепкасов, С. Ю. & Кузнецов, С. А., 17 Dec 2022, In: Сибирский физический журнал. 17, 3, p. 66-88 23 p., 9.

    Research output: Contribution to journal › Article › peer-review

  5. SOI-FET Sensors with Dielectrophoretic Concentration of Viruses and Proteins

    Naumova, O., Generalov, V., Shcherbakov, D., Zaitseva, E., Zhivodkov, Y., Kozhukhov, A., Latyshev, A., Aseev, A., Safatov, A., Buryak, G., Cheremiskina, A., Merkuleva, J. & Rudometova, N., 8 Nov 2022, In: Biosensors. 12, 11

    Research output: Contribution to journal › Article › peer-review

  6. 2021

  7. Научное наследие С.В. Богданова

    Кидяров, Б. И., Колосовский, Е. А., Царев, А. В., Неизвестный, И. Г., Асеев, А. Л., Латышев, А. В., Чаплик, А. В. & Двуреченский, А. В., Nov 2021, In: Автометрия. 57, 5, p. 106-110 5 p., 13.

    Research output: Contribution to journal › Article › peer-review

  8. Scientific Heritage of S. V. Bogdanov

    Kidyarov, B. I., Kolosovsky, E. A., Tsarev, A. V., Neizvestny, I. G., Aseev, A. L., Latyshev, A. V., Chaplik, A. V. & Dvurechenskii, A. V., 1 Sept 2021, In: Optoelectronics, Instrumentation and Data Processing. 57, 5, p. 539-543 5 p.

    Research output: Contribution to journal › Article › peer-review

  9. Biosensors Based on SOI Nanowire Transistors for Biomedicine and Virusology

    Naumova, O. V., Generalov, V. M., Zaitseva, E. G., Latyshev, A. V., Aseev, A. L., Pyankov, S. A., Kolosova, I. V., Ananko, G. G., Agafonov, A. P., Gavrilova, E. V., Maksyutov, R. A. & Safatov, A. S., May 2021, In: Russian Microelectronics. 50, 3, p. 137-145 9 p.

    Research output: Contribution to journal › Article › peer-review

  10. Наука Сибири на изломе эпох: заметки участника событий

    Асеев, А. Л., 2021, Новосибирск: ИПЦ НГУ. 304 p.

    Research output: Book/Report › Book › Research › peer-review

  11. 2020

  12. Effect of deposition conditions on the thermal stability of Ge layers on SiO2 and their dewetting behavior

    Dabard, C., Shklyaev, A. A., Armbrister, V. A. & Aseev, A. L., 1 Jan 2020, In: Thin Solid Films. 693, 7 p., 137681.

    Research output: Contribution to journal › Article › peer-review

  13. Semiconductor nanostructures for modern electronics

    Aseev, A. L., Latyshev, A. V. & Dvurechenskii, A. V., 2020, Advanced Research in Materials Science III. Davaasambuu, J. (ed.). Trans Tech Publications Ltd, p. 65-80 16 p. (Solid State Phenomena; vol. 310 SSP).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  14. 2019

  15. MBE-grown MCT hetero- A nd nanostructures for IR and THz detectors

    Dvoretsky, S. A., Mikhailov, N. N., Remesnik, V. G., Sidorov, Y. G., Shvets, V. A., Ikusov, D. G., Varavin, V. S., Yakushev, M. V., Gumenjuk-Sichevska, J. V., Golenkov, A. G., Lysiuk, I. O., Tsybrii, Z. F., Shevchik-Shekera, A. V., Sizov, F. F., Latyshev, A. V. & Aseev, A. L., 1 Sept 2019, In: Opto-electronics Review. 27, 3, p. 282-290 9 p.

    Research output: Contribution to journal › Article › peer-review

  16. Памяти Жореса Ивановича Алфёрова

    Асеев, А. Л., Варшалович, Д. А., Велихов, Е. П., Грехов, И. В., Гуляев, Ю. В., Жуков, А. Е., Иванов, С. В., Каплянский, А. А., Копьев, П. С., Красников, Г. Я., Сурис, Р. А. & Фортов, В. Е., Aug 2019, In: Physics-Uspekhi. 62, 8, p. 839-840 2 p.

    Research output: Contribution to journal › Article › peer-review

  17. 2017

  18. Element base of quantum informatics II: Quantum communications with single photons

    Ryabtsev, I. I., Tretyakov, D. B., Kolyako, A. V., Pleshkov, A. S., Entin, V. M., Neizvestny, I. G., Latyshev, A. V. & Aseev, A. L., 1 Mar 2017, In: Russian Microelectronics. 46, 2, p. 121-130 10 p.

    Research output: Contribution to journal › Article › peer-review

  19. Element base of quantum informatics I. Qubits of a quantum computer based on single atoms in optical traps

    Ryabtsev, I. I., Beterov, I. I., Yakshina, E. A., Tretyakov, D. B., Entin, V. M., Neizvestny, I. G., Latyshev, A. V. & Aseev, A. L., 1 Mar 2017, In: Russian Microelectronics. 46, 2, p. 109-120 12 p.

    Research output: Contribution to journal › Article › peer-review

  20. Atomic Processes on the Silicon Surface

    Latyshev, A. V., Fedina, L. I., Kosolobov, S. S., Sitnikov, S. V., Rogilo, D. I., Rodyakina, E. E., Nasimov, D. A., Sheglov, D. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Inc., p. 189-221 33 p.

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  21. Atomic Structure of Semiconductor Low-Dimensional Heterosystems

    Gutakovskii, A. K., Latyshev, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Inc., p. 223-253 31 p.

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  22. Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures

    Tkachenko, O. A., Tkachenko, V. A., Kvon, Z. D., Sheglov, D. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Inc., p. 131-155 25 p.

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  23. Preface

    Latyshev, A. V., Dvurechenskii, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Science Inc., p. xxiii-xxiv

    Research output: Chapter in Book/Report/Conference proceeding › Foreword/postscript › Research › peer-review

  24. Preface

    Latyshev, A. V., Dvurechenskii, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Science Inc., p. xxiii-xxiv

    Research output: Chapter in Book/Report/Conference proceeding › Foreword/postscript › Research › peer-review

  25. Universality of the (113) Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation

    Fedina, L. I., Gutakovskii, A. K., Latyshev, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Inc., p. 383-407 25 p.

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

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