Universality of the (113) Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation

Original language	English
Title of host publication	Advances in Semiconductor Nanostructures
Subtitle of host publication	Growth, Characterization, Properties and Applications
Editors	AV Latyshev, AV Dvurechenskii, AL Aseev
Publisher	Elsevier Science Inc.
Pages	383-407
Number of pages	25
ISBN (Electronic)	9780128105139
ISBN (Print)	9780128105122
DOIs	https://doi.org/10.1016/B978-0-12-810512-2.00016-0
Publication status	Published - 1 Jan 2017

113 defects, In situ HRTEM irradiation experiments, Self-interstitial atoms, Self-ordering, Topological-bond defects, Vacancies, INTRINSIC POINT-DEFECTS, MOLECULAR-DYNAMICS, SILICON, EXTENDED DEFECTS, TIGHT-BINDING, FZ-SI, ELECTRON-IRRADIATION, ION-IMPLANTATION, HREM IRRADIATION, DIFFUSION

ID: 21753459