1. 2025
  2. Полупроводники и нанотехнологии

    Асеев, А. Л., 2025, Москва: Юрайт. 152 p.

    Research output: Book/ReportBookEducationpeer-review

  3. 2024
  4. Полупроводники и нанотехнологии

    Асеев, А. Л., 2024, Москва: Юрайт. 152 p.

    Research output: Book/ReportBookEducationpeer-review

  5. 2023
  6. Полупроводники и нанотехнологии

    Асеев, А. Л., 2023, Сборник тезисов: Школа молодых ученых «Актуальные проблемы полупроводниковых наносистем¬.

    Research output: Chapter in Book/Report/Conference proceedingArticle in an anthologypeer-review

  7. 2022
  8. SOI-FET Sensors with Dielectrophoretic Concentration of Viruses and Proteins

    Naumova, O., Generalov, V., Shcherbakov, D., Zaitseva, E., Zhivodkov, Y., Kozhukhov, A., Latyshev, A., Aseev, A., Safatov, A., Buryak, G., Cheremiskina, A., Merkuleva, J. & Rudometova, N., 8 Nov 2022, In: Biosensors. 12, 11

    Research output: Contribution to journalArticlepeer-review

  9. 2021
  10. Научное наследие С.В. Богданова

    Кидяров, Б. И., Колосовский, Е. А., Царев, А. В., Неизвестный, И. Г., Асеев, А. Л., Латышев, А. В., Чаплик, А. В. & Двуреченский, А. В., Nov 2021, In: Автометрия. 57, 5, p. 106-110 5 p., 13.

    Research output: Contribution to journalArticlepeer-review

  11. Scientific Heritage of S. V. Bogdanov

    Kidyarov, B. I., Kolosovsky, E. A., Tsarev, A. V., Neizvestny, I. G., Aseev, A. L., Latyshev, A. V., Chaplik, A. V. & Dvurechenskii, A. V., 1 Sept 2021, In: Optoelectronics, Instrumentation and Data Processing. 57, 5, p. 539-543 5 p.

    Research output: Contribution to journalArticlepeer-review

  12. Biosensors Based on SOI Nanowire Transistors for Biomedicine and Virusology

    Naumova, O. V., Generalov, V. M., Zaitseva, E. G., Latyshev, A. V., Aseev, A. L., Pyankov, S. A., Kolosova, I. V., Ananko, G. G., Agafonov, A. P., Gavrilova, E. V., Maksyutov, R. A. & Safatov, A. S., May 2021, In: Russian Microelectronics. 50, 3, p. 137-145 9 p.

    Research output: Contribution to journalArticlepeer-review

  13. Наука Сибири на изломе эпох: заметки участника событий

    Асеев, А. Л., 2021, Новосибирск: ИПЦ НГУ. 304 p.

    Research output: Book/ReportBookResearchpeer-review

  14. 2020
  15. Effect of deposition conditions on the thermal stability of Ge layers on SiO2 and their dewetting behavior

    Dabard, C., Shklyaev, A. A., Armbrister, V. A. & Aseev, A. L., 1 Jan 2020, In: Thin Solid Films. 693, 7 p., 137681.

    Research output: Contribution to journalArticlepeer-review

  16. Semiconductor nanostructures for modern electronics

    Aseev, A. L., Latyshev, A. V. & Dvurechenskii, A. V., 2020, Advanced Research in Materials Science III. Davaasambuu, J. (ed.). Trans Tech Publications Ltd, p. 65-80 16 p. (Solid State Phenomena; vol. 310 SSP).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

  17. 2019
  18. MBE-grown MCT hetero- A nd nanostructures for IR and THz detectors

    Dvoretsky, S. A., Mikhailov, N. N., Remesnik, V. G., Sidorov, Y. G., Shvets, V. A., Ikusov, D. G., Varavin, V. S., Yakushev, M. V., Gumenjuk-Sichevska, J. V., Golenkov, A. G., Lysiuk, I. O., Tsybrii, Z. F., Shevchik-Shekera, A. V., Sizov, F. F., Latyshev, A. V. & Aseev, A. L., 1 Sept 2019, In: Opto-electronics Review. 27, 3, p. 282-290 9 p.

    Research output: Contribution to journalArticlepeer-review

  19. Памяти Жореса Ивановича Алфёрова

    Асеев, А. Л., Варшалович, Д. А., Велихов, Е. П., Грехов, И. В., Гуляев, Ю. В., Жуков, А. Е., Иванов, С. В., Каплянский, А. А., Копьев, П. С., Красников, Г. Я., Сурис, Р. А. & Фортов, В. Е., Aug 2019, In: Physics-Uspekhi. 62, 8, p. 839-840 2 p.

    Research output: Contribution to journalArticlepeer-review

  20. 2017
  21. Element base of quantum informatics II: Quantum communications with single photons

    Ryabtsev, I. I., Tretyakov, D. B., Kolyako, A. V., Pleshkov, A. S., Entin, V. M., Neizvestny, I. G., Latyshev, A. V. & Aseev, A. L., 1 Mar 2017, In: Russian Microelectronics. 46, 2, p. 121-130 10 p.

    Research output: Contribution to journalArticlepeer-review

  22. Element base of quantum informatics I. Qubits of a quantum computer based on single atoms in optical traps

    Ryabtsev, I. I., Beterov, I. I., Yakshina, E. A., Tretyakov, D. B., Entin, V. M., Neizvestny, I. G., Latyshev, A. V. & Aseev, A. L., 1 Mar 2017, In: Russian Microelectronics. 46, 2, p. 109-120 12 p.

    Research output: Contribution to journalArticlepeer-review

  23. Atomic Processes on the Silicon Surface

    Latyshev, A. V., Fedina, L. I., Kosolobov, S. S., Sitnikov, S. V., Rogilo, D. I., Rodyakina, E. E., Nasimov, D. A., Sheglov, D. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 189-221 33 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

  24. Atomic Structure of Semiconductor Low-Dimensional Heterosystems

    Gutakovskii, A. K., Latyshev, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 223-253 31 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

  25. Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures

    Tkachenko, O. A., Tkachenko, V. A., Kvon, Z. D., Sheglov, D. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 131-155 25 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

  26. Preface

    Latyshev, A. V., Dvurechenskii, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Elsevier Science Publishing Company, Inc., p. xxiii-xxiv (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingForeword/postscriptResearchpeer-review

  27. Preface

    Latyshev, A. V., Dvurechenskii, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Science Publishing Company, Inc., p. xxiii-xxiv (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingForeword/postscriptResearchpeer-review

  28. Universality of the (113) Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation

    Fedina, L. I., Gutakovskii, A. K., Latyshev, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 383-407 25 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

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