1. 2018
  2. Shubnikov-de Haas oscillations in p and n-type topological insulator (BixSb1-x)2Te3

    Akiyama, R., Sumida, K., Ichinokura, S., Nakanishi, R., Kimura, A., Kokh, K. A., Tereshchenko, O. E. & Hasegawa, S., 6 Jun 2018, In: Journal of Physics Condensed Matter. 30, 26, 8 p., 265001.

    Research output: Contribution to journalArticlepeer-review

  3. Atomic and Electronic Structures of Intrinsic Defects in Ta2O5: Ab Initio Simulation

    Perevalov, T. V., Islamov, D. R. & Chernykh, I. G., 1 Jun 2018, In: JETP Letters. 107, 12, p. 761-765 5 p.

    Research output: Contribution to journalArticlepeer-review

  4. Thermopower of a Two-Dimensional Semimetal in a HgTe Quantum Well

    Gusev, G. M., Olshanetsky, E. B., Kvon, Z. D., Magarill, L. I., Entin, M. V., Levin, A. & Mikhailov, N. N., 1 Jun 2018, In: JETP Letters. 107, 12, p. 789-793 5 p.

    Research output: Contribution to journalArticlepeer-review

  5. Electronic structure of stoichiometric and oxygen-deficient ferroelectric Hf0.5Zr0.5O2

    Perevalov, T. V., Islamov, D. R., Gritsenko, V. A. & Prosvirin, I. P., 11 May 2018, In: Nanotechnology. 29, 19, 8 p., 194001.

    Research output: Contribution to journalArticlepeer-review

  6. Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometric Bi2 Te2 S

    Annese, E., Okuda, T., Schwier, E. F., Iwasawa, H., Shimada, K., Natamane, M., Taniguchi, M., Rusinov, I. P., Eremeev, S. V., Kokh, K. A., Golyashov, V. A., Tereshchenko, O. E., Chulkov, E. V. & Kimura, A., 10 May 2018, In: Physical Review B. 97, 20, 6 p., 205113.

    Research output: Contribution to journalArticlepeer-review

  7. Enhanced photovoltage on the surface of topological insulator via optical aging

    Yoshikawa, T., Ishida, Y., Sumida, K., Chen, J., Kokh, K. A., Tereshchenko, O. E., Shin, S. & Kimura, A., 7 May 2018, In: Applied Physics Letters. 112, 19, 4 p., 192104.

    Research output: Contribution to journalArticlepeer-review

  8. Influence of quantizing magnetic field and Rashba effect on indium arsenide metal-oxide-semiconductor structure accumulation capacitance

    Kovchavtsev, A. P., Aksenov, M. S., Tsarenko, A. V., Nastovjak, A. E., Pogosov, A. G., Pokhabov, D. A., Tereshchenko, O. E. & Valisheva, N. A., 7 May 2018, In: Journal of Applied Physics. 123, 17, 6 p., 173901.

    Research output: Contribution to journalArticlepeer-review

  9. Bielectron Formed in a 2D System by the Spin–Orbit Interaction and Image Forces

    Mahmoodian, M. M. & Chaplik, A. V., 1 May 2018, In: JETP Letters. 107, 9, p. 564-568 5 p.

    Research output: Contribution to journalArticlepeer-review

  10. New Method of Porous Ge Layer Fabrication: Structure and Optical Properties

    Gorokhov, E. B., Astankova, K. N., Azarov, I. A., Volodin, V. A. & Latyshev, A. V., 1 May 2018, In: Semiconductors. 52, 5, p. 628-631 4 p.

    Research output: Contribution to journalArticlepeer-review

  11. Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation

    Kazantsev, D. M., Akhundov, I. O., Alperovich, V. L., Shwartz, N. L., Kozhukhov, A. S. & Latyshev, A. V., 1 May 2018, In: Semiconductors. 52, 5, p. 618-621 4 p.

    Research output: Contribution to journalArticlepeer-review

ID: 3084764