Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	55-59
Number of pages	5
Journal	Microelectronic Engineering
Volume	206
DOIs	https://doi.org/10.1016/j.mee.2018.12.011
Publication status	Published - 1 Feb 2019

electron-phonon scattering, energy relaxation mechanisms, inelastic processes, Non-linear transport, Topological insulators

ID: 18295759