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Electron spatial localization tuned by strain in Ge/Si quantum dot heterostructures

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1103/PhysRevB.99.115314
Final published version

A. F. Zinovieva
V. A. Zinovyev
A. V. Nenashev
L. V. Kulik
A. V. Dvurechenskii

Original language	English
Article number	115314
Number of pages	9
Journal	Physical Review B
Volume	99
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevB.99.115314
Publication status	Published - 22 Mar 2019

OECD FOS+WOS

Research areas

SPIN-RESONANCE EXPERIMENTS, ISLANDS, SI, PHOTOLUMINESCENCE, SILICON, DONORS

ID: 19358284