Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films › Research Explorer

DOI

https://doi.org/10.1016/j.actamat.2018.12.008
Final published version

Damir R. Islamov
Vladimir A. Gritsenko
Timofey V. Perevalov
Vladimir A. Pustovarov
Oleg M. Orlov
Anna G. Chernikova
Andrey M. Markeev
Stefan Slesazeck
Uwe Schroeder
Thomas Mikolajick
Gennadiy Ya Krasnikov

Original language	English
Pages (from-to)	47-55
Number of pages	9
Journal	Acta Materialia
Volume	166
DOIs	https://doi.org/10.1016/j.actamat.2018.12.008
Publication status	Published - 1 Mar 2019

Research areas

Defects, Ferroelectric HfZrO, Leakage currents, Luminescence, Oxygen vacancies, POLARIZATION REVERSAL, MECHANISM, Ferroelectric Hf0.5Zr0.5O2, CHARGE-TRANSPORT, HAFNIUM

OECD FOS+WOS

ID: 18069054