Conduction mechanisms of TaN/HfO x /Ni memristors › Research Explorer

DOI

https://doi.org/10.1088/2053-1591/ab11aa
Final published version

V. A. Voronkovskii
V. S. Aliev
A. K. Gerasimova
D. R. Islamov

Original language	English
Article number	076411
Number of pages	7
Journal	Materials Research Express
Volume	6
Issue number	7
DOIs	https://doi.org/10.1088/2053-1591/ab11aa
Publication status	Published - 5 Apr 2019

OECD FOS+WOS

Research areas

dielectric films, memristors, resistive RAM, CHARGE-LIMITED CURRENTS

ID: 20159018