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  1. Atomic and Electronic Structure of Defect Ni Complexes and Oxygen Vacancies in HfO2 and Their Influence on Charge Transport in Memristors

    Perevalov, T. V., Islamov, D. R. & Chernov, A. A., Sept 2025, In: Journal of Experimental and Theoretical Physics. 141, 1-3, p. 113-119 7 p.

    Research output: Contribution to journal › Article › peer-review

  2. Atomic and electronic structure of oxygen polyvacancies in ZrO2

    Perevalov, T. V. & Islamov, D. R., 25 Jun 2017, In: Microelectronic Engineering. 178, p. 275-278 4 p.

    Research output: Contribution to journal › Article › peer-review

  3. Atomic and Electronic Structures of Intrinsic Defects in Ta2O5: Ab Initio Simulation

    Perevalov, T. V., Islamov, D. R. & Chernykh, I. G., 1 Jun 2018, In: JETP Letters. 107, 12, p. 761-765 5 p.

    Research output: Contribution to journal › Article › peer-review

  4. Atomic and electronic structures of the native defects responsible for the resistive effect in HfO2: ab initio simulations

    Perevalov, T. V. & Islamov, D. R., 15 Aug 2019, In: Microelectronic Engineering. 216, 5 p., 111038.

    Research output: Contribution to journal › Article › peer-review

  5. Atomic Force Microscopy Local Oxidation of GeO Thin Films

    Astankova, K. N., Kozhukhov, A. S., Gorokhov, E. B., Azarov, I. A. & Latyshev, A. V., 1 Dec 2018, In: Semiconductors. 52, 16, p. 2081-2084 4 p.

    Research output: Contribution to journal › Article › peer-review

  6. Atomic Processes on the Silicon Surface

    Latyshev, A. V., Fedina, L. I., Kosolobov, S. S., Sitnikov, S. V., Rogilo, D. I., Rodyakina, E. E., Nasimov, D. A., Sheglov, D. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 189-221 33 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  7. Atomic Rearrangements and Photoemission Processes at a p-GaN(Cs)–Vacuum Interface

    Bakin, V. V., Kosolobov, S. N., Rozhkov, S. A., Scheibler, H. E. & Terekhov, A. S., 1 Aug 2018, In: JETP Letters. 108, 3, p. 180-184 5 p.

    Research output: Contribution to journal › Article › peer-review

  8. Atomic Structure and Optical Properties of CaSi2 Layers Grown on CaF2/Si Substrates

    Zinovyev, V. A., Kacyuba, A. V., Volodin, V. A., Zinovieva, A. F., Cherkova, S. G., Smagina, Z. V., Dvurechenskii, A. V., Krupin, A. Y., Borodavchenko, O. M., Zhivulko, V. D. & Mudryi, A. V., Oct 2021, In: Semiconductors. 55, 10, p. 808-811 4 p.

    Research output: Contribution to journal › Article › peer-review

  9. Atomic Structure of Semiconductor Low-Dimensional Heterosystems

    Gutakovskii, A. K., Latyshev, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 223-253 31 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  10. A two-dimensional electron gas sensing motion of a nanomechanical cantilever

    Shevyrin, A. & Pogosov, A., 12 May 2017, In: Mechanical Sciences. 8, 1, p. 111-115 5 p.

    Research output: Contribution to journal › Article › peer-review

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