Atomic Rearrangements and Photoemission Processes at a p-GaN(Cs)–Vacuum Interface › Research Explorer

Novosibirsk State University's Research Portal

Atomic Rearrangements and Photoemission Processes at a p-GaN(Cs)–Vacuum Interface

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1134/S0021364018150031
Final published version

V. V. Bakin
S. N. Kosolobov
S. A. Rozhkov
H. E. Scheibler
A. S. Terekhov

Original language	English
Pages (from-to)	180-184
Number of pages	5
Journal	JETP Letters
Volume	108
Issue number	3
DOIs	https://doi.org/10.1134/S0021364018150031
Publication status	Published - 1 Aug 2018

OECD FOS+WOS

Research areas

NEGATIVE ELECTRON-AFFINITY, P-GAN(0001) SURFACES, GAAS-CS, PHOTOELECTRONS, PHOTOCATHODE, ADSORPTION, STATES

ID: 17249390