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Atomic and electronic structures of the native defects responsible for the resistive effect in HfO₂: ab initio simulations

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1016/j.mee.2019.111038
Final published version

T. V. Perevalov
D. R. Islamov

Original language	English
Article number	111038
Number of pages	5
Journal	Microelectronic Engineering
Volume	216
DOIs	https://doi.org/10.1016/j.mee.2019.111038
Publication status	Published - 15 Aug 2019

OECD FOS+WOS

Research areas

Charge trapping, Density functional theory, Hafnium oxide, Native defects, Oxygen vacancy, RRAM, OXYGEN

ID: 20642633