1. 2018
  2. Giant Terahertz Photoconductance of Quantum Point Contacts in the Tunneling Regime

    Otteneder, M., Kvon, Z. D., Tkachenko, O. A., Tkachenko, V. A., Jaroshevich, A. S., Rodyakina, E. E., Latyshev, A. V. & Ganichev, S. D., 17 Jul 2018, In: Physical Review Applied. 10, 1, 9 p., 014015.

    Research output: Contribution to journalArticlepeer-review

  3. Nanoantenna structures for the detection of phonons in nanocrystals

    Milekhin, A. G., Kuznetsov, S. A., Milekhin, I. A., Sveshnikova, L. L., Duda, T. A., Rodyakina, E. E., Latyshev, A. V., Dzhagan, V. M. & Zahn, D. R. T., 5 Oct 2018, In: Beilstein Journal of Nanotechnology. 9, p. 2646-2656 11 p.

    Research output: Contribution to journalArticlepeer-review

  4. A highly porous surface of synthetic monocrystalline diamond: Effect of etching by Fe nanoparticles in hydrogen atmosphere

    Chepurov, A., Sonin, V., Shcheglov, D., Latyshev, A., Filatov, E. & Yelisseyev, A., 1 Nov 2018, In: International Journal of Refractory Metals and Hard Materials. 76, p. 12-15 4 p.

    Research output: Contribution to journalArticlepeer-review

  5. Controlling the Si(001) Surface Morphology upon Thermal Annealing in a Vacuum Chamber

    Rodyakina, E. E., Sitnikov, S. V., Rogilo, D. I. & Latyshev, A. V., 1 Nov 2018, In: Russian Microelectronics. 47, 6, p. 365-370 6 p.

    Research output: Contribution to journalArticlepeer-review

  6. Atomic Force Microscopy Local Oxidation of GeO Thin Films

    Astankova, K. N., Kozhukhov, A. S., Gorokhov, E. B., Azarov, I. A. & Latyshev, A. V., 1 Dec 2018, In: Semiconductors. 52, 16, p. 2081-2084 4 p.

    Research output: Contribution to journalArticlepeer-review

  7. 2019
  8. Electromigration effect on the surface morphology during the Ge deposition on Si(1 1 1) at high temperatures

    Shklyaev, A. A. & Latyshev, A. V., 28 Jan 2019, In: Applied Surface Science. 465, p. 10-14 5 p.

    Research output: Contribution to journalArticlepeer-review

  9. Resonance reflection of light by ordered silicon nanopillar arrays with the vertical p-n junction

    Basalaeva, L. S., Nastaushev, Y. V., Kryzhanovskaya, N. V., Moiseev, E. I., Radnatarov, D. A., Khripunov, S. A., Utkin, D. E., Chistokhin, I. B., Latyshev, A. V. & Dultsev, F. N., 28 Feb 2019, In: Thin Solid Films. 672, p. 109-113 5 p.

    Research output: Contribution to journalArticlepeer-review

  10. Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing

    Petrov, A. S., Sitnikov, S. V., Kosolobov, S. S. & Latyshev, A. V., 1 Apr 2019, In: Semiconductors. 53, 4, p. 434-438 5 p.

    Research output: Contribution to journalArticlepeer-review

  11. The role of a plasmonic substrate on the enhancement and spatial resolution of tip-enhanced Raman scattering

    Rahaman, M., Milekhin, A. G., Mukherjee, A., Rodyakina, E. E., Latyshev, A. V., Dzhagan, V. M. & Zahn, D. R. T., 1 May 2019, In: Faraday Discussions. 214, p. 309-323 15 p.

    Research output: Contribution to journalArticlepeer-review

  12. Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation

    Sitnikov, S. V., Rodyakina, E. E. & Latyshev, A. V., 1 Jun 2019, In: Semiconductors. 53, 6, p. 795-799 5 p.

    Research output: Contribution to journalArticlepeer-review

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