Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation › Research Explorer

Novosibirsk State University's Research Portal

Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1134/S106378261906023X
Final published version

Original language	English
Pages (from-to)	795-799
Number of pages	5
Journal	Semiconductors
Volume	53
Issue number	6
DOIs	https://doi.org/10.1134/S106378261906023X
Publication status	Published - 1 Jun 2019

Research areas

ATOMIC STEPS, SI(001), DIFFUSION, SI

OECD FOS+WOS

ID: 20589172