1. 2017
  2. Formation of Periodic Structures (2D-PhCs) by Scanning Electron Lithography

    Utkin, D., Shklyev, A., Tsarev, A., Latyshev, A. & Nasimov, D., 1 Jan 2017, In: Physics Procedia. 86, p. 127-130 4 p.

    Research output: Contribution to journalConference articlepeer-review

  3. Preface

    Latyshev, A. V., Dvurechenskii, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Elsevier Science Publishing Company, Inc., p. xxiii-xxiv (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingForeword/postscriptResearchpeer-review

  4. Preface

    Latyshev, A. V., Dvurechenskii, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Science Publishing Company, Inc., p. xxiii-xxiv (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingForeword/postscriptResearchpeer-review

  5. Surface Morphologies Obtained by Ge Deposition on Bare and Oxidized Silicon Surfaces at Different Temperatures

    Shklyaev, A. A., Romanyuk, K. N., Kosolobov, S. S. & Latyshev, A. V., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 325-344 20 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

  6. Universality of the (113) Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation

    Fedina, L. I., Gutakovskii, A. K., Latyshev, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 383-407 25 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

  7. Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth

    Sitnikov, S. V., Kosolobov, S. S. & Latyshev, A. V., 1 Feb 2017, In: Semiconductors. 51, 2, p. 203-206 4 p.

    Research output: Contribution to journalArticlepeer-review

  8. Giant microwave-induced B -periodic magnetoresistance oscillations in a two-dimensional electron gas with a bridged-gate tunnel point contact

    Levin, A. D., Mikhailov, S. A., Gusev, G. M., Kvon, Z. D., Rodyakina, E. E. & Latyshev, A. V., 23 Feb 2017, In: Physical Review B. 95, 8, 4 p., 081408.

    Research output: Contribution to journalArticlepeer-review

  9. Element base of quantum informatics II: Quantum communications with single photons

    Ryabtsev, I. I., Tretyakov, D. B., Kolyako, A. V., Pleshkov, A. S., Entin, V. M., Neizvestny, I. G., Latyshev, A. V. & Aseev, A. L., 1 Mar 2017, In: Russian Microelectronics. 46, 2, p. 121-130 10 p.

    Research output: Contribution to journalArticlepeer-review

  10. Element base of quantum informatics I. Qubits of a quantum computer based on single atoms in optical traps

    Ryabtsev, I. I., Beterov, I. I., Yakshina, E. A., Tretyakov, D. B., Entin, V. M., Neizvestny, I. G., Latyshev, A. V. & Aseev, A. L., 1 Mar 2017, In: Russian Microelectronics. 46, 2, p. 109-120 12 p.

    Research output: Contribution to journalArticlepeer-review

  11. Local anodic oxidation of solid GeO films: The nanopatterning possibilities

    Astankova, K. N., Gorokhov, E. B., Azarov, I. A., Volodin, V. A. & Latyshev, A. V., 1 Mar 2017, In: Surfaces and Interfaces. 6, p. 56-59 4 p.

    Research output: Contribution to journalArticlepeer-review

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