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  1. Formation of SnO and SnO2 phases during the annealing of SnO(x) films obtained by molecular beam epitaxy

    Nikiforov, A., Timofeev, V., Mashanov, V., Azarov, I., Loshkarev, I., Volodin, V., Gulyaev, D., Chetyrin, I. & Korolkov, I., 15 May 2020, In: Applied Surface Science. 512, 7 p., 145735.

    Research output: Contribution to journal › Article › peer-review

  2. Formation of light-emitting defects in silicon by swift heavy ion irradiation and subsequent annealing

    Cherkova, S. G., Volodin, V. A., Skuratov, V. A., Stoffel, M., Rinnert, H. & Vergnat, M., Feb 2023, In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 535, p. 132-136 5 p.

    Research output: Contribution to journal › Article › peer-review

  3. Formation of germanium nanocrystals and amorphous nanoclusters in GeSiOx films using electron beam annealing

    Zhang, F., Volodin, V. A., Baranov, E. A., Konstantinov, V. O., Shchukin, V. G., Zamchiy, A. O. & Vergnat, M., Mar 2022, In: Vacuum. 197, 110796.

    Research output: Contribution to journal › Article › peer-review

  4. Formation of Germanium Nanocrystals and Amorphous Nanoclusters in GeO[SiO] and GeO[SiO2] Films Using Electron Beam Annealing

    Konstantinov, V. O., Baranov, E. A., Fan, Z., Shchukin, V. G., Zamchiy, A. O. & Volodin, V. A., 18 Sept 2024, In: Technical Physics. 69, 4, p. 898-905 8 p.

    Research output: Contribution to journal › Article › peer-review

  5. Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region

    Krivyakin, G. K., Volodin, V. A., Shklyaev, A. A., Mortet, V., More-Chevalier, J., Ashcheulov, P., Remes, Z., Stuchliková, T. H. & Stuchlik, J., 1 Oct 2017, In: Semiconductors. 51, 10, p. 1370-1376 7 p.

    Research output: Contribution to journal › Article › peer-review

  6. Forbidden Resonant Raman Scattering in GaAs/AlAs Superlattices: Experiment and Calculations

    Volodin, V. A., Sachkov, V. A. & Sinyukov, M. P., 1 Jun 2018, In: Semiconductors. 52, 6, p. 717-722 6 p.

    Research output: Contribution to journal › Article › peer-review

  7. Femtosecond Laser Crystallization of Ultrathin a-Ge Films in Multilayer Stacks with Silicon Layers

    Cheng, Y., Bulgakov, A. V., Bulgakova, N. M., Beránek, J., Kacyuba, A. V. & Volodin, V. A., 16 Oct 2025, In: Applied Sciences. 15, 20, p. 11082

    Research output: Contribution to journal › Article › peer-review

  8. Femtosecond Laser Annealing of Multilayer Thin-Film Structures Based on Amorphous Germanium and Silicon

    Kolchin, A. V., Shuleiko, D. V., Pavlikov, A. V., Zabotnov, S. V., Golovan, L. A., Presnov, D. E., Volodin, V. A., Krivyakin, G. K., Popov, A. A. & Kashkarov, P. K., 1 Jun 2020, In: Technical Physics Letters. 46, 6, p. 560-563 4 p.

    Research output: Contribution to journal › Article › peer-review

  9. Fabrication of polycrystalline silicon thin films from a-SiOx via the inverted aluminum-induced layer exchange process

    Zamchiy, A. O., Baranov, E. A., Maximovskiy, E. A., Volodin, V. A., Vdovin, V. I., Gutakovskii, A. K. & Korolkov, I. V., 15 Feb 2020, In: Materials Letters. 261, 4 p., 127086.

    Research output: Contribution to journal › Article › peer-review

  10. Evaluation of ultrananocrystalline diamond size by UV Raman spectroscopy and a phonon confinement model

    Kumar, N., Panda, K., Kozakov, A. T., Nikolskii, A. V., Volodin, V. A. & Goryainov, S. V., 29 Oct 2025, In: Physical chemistry chemical physics : PCCP. 27, 42, p. 22746-22754 9 p.

    Research output: Contribution to journal › Article › peer-review

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