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About
Ge nanocrystals formed by furnace annealing of Ge
(x)
[SiO
2
]
(1-x)
films: Structure and optical properties
Research output
:
Contribution to journal
›
Article
›
peer-review
Section of Automation of Physical and Technical Research
General Physics Section
Overview
Cite this
DOI
https://doi.org/10.1088/2053-1591/aa7c38
Final published version
V. A. Volodin
A. G. Cherkov
A. Kh Antonenko
M. Stoffel
H. Rinnert
M. Vergnat
Original language
English
Article number
075010
Number of pages
9
Journal
Materials Research Express
Volume
4
Issue number
7
DOIs
https://doi.org/10.1088/2053-1591/aa7c38
Publication status
Published -
1 Jul 2017
OECD FOS+WOS
Research areas
Defects, Ge nanocrystals, Nanoclusters, Photoluminescence, Raman scattering, photoluminescence, SILICON, SIZE, NANOSTRUCTURES, BAND-GAP, ELECTROLUMINESCENCE, RAMAN-SPECTROSCOPY DATA, INFRARED PHOTOLUMINESCENCE, NANOCLUSTERS, nanoclusters, defects, QUANTUM CONFINEMENT, EMISSION
ID: 9965708
