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  1. Atomic and electronic structure of oxygen polyvacancies in ZrO2

    Perevalov, T. V. & Islamov, D. R., 25 Jun 2017, In: Microelectronic Engineering. 178, p. 275-278 4 p.

    Research output: Contribution to journal › Article › peer-review

  2. Atomic and Electronic Structures of Intrinsic Defects in Ta2O5: Ab Initio Simulation

    Perevalov, T. V., Islamov, D. R. & Chernykh, I. G., 1 Jun 2018, In: JETP Letters. 107, 12, p. 761-765 5 p.

    Research output: Contribution to journal › Article › peer-review

  3. Atomic and electronic structures of the native defects responsible for the resistive effect in HfO2: ab initio simulations

    Perevalov, T. V. & Islamov, D. R., 15 Aug 2019, In: Microelectronic Engineering. 216, 5 p., 111038.

    Research output: Contribution to journal › Article › peer-review

  4. Charge transport in thin hafnium and zirconium oxide films

    Islamov, D. R., Gritsenko, V. A. & Chin, A., 1 Mar 2017, In: Optoelectronics, Instrumentation and Data Processing. 53, 2, p. 184-189 6 p.

    Research output: Contribution to journal › Article › peer-review

  5. Charge transport mechanism in dielectrics: drift and diffusion of trapped charge carriers

    Pil’nik, A. A., Chernov, A. A. & Islamov, D. R., 1 Dec 2020, In: Scientific Reports. 10, 1, 10 p., 15759.

    Research output: Contribution to journal › Article › peer-review

  6. Conduction mechanisms of TaN/HfO x /Ni memristors

    Voronkovskii, V. A., Aliev, V. S., Gerasimova, A. K. & Islamov, D. R., 5 Apr 2019, In: Materials Research Express. 6, 7, 7 p., 076411.

    Research output: Contribution to journal › Article › peer-review

  7. CPU vs RAM in the Issue of ab initio Simulations of Doped Hafnium Oxide for RRAM and FRAM

    Perevalov, T. V. & Islamov, D. R., 2023, In: Supercomputing Frontiers and Innovations. 10, 3, p. 18-26 9 p.

    Research output: Contribution to journal › Article › peer-review

  8. Determination of trap density in hafnia films produced by two atomic layer deposition techniques

    Islamov, D. R., Gritsenko, V. A. & Lebedev, M. S., 25 Jun 2017, In: Microelectronic Engineering. 178, p. 104-107 4 p.

    Research output: Contribution to journal › Article › peer-review

  9. Determination of trap density in hafnium oxide films produced by different atomic layer deposition techniques

    Islamov, D. R., Gritsenko, V. A. & Lebedev, M. S., 1 Jan 2017, SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR. Misra, D., DeGendt, S., Houssa, M., Kita, K. & Landheer, D. (eds.). 1 ed. Electrochemical Society, Inc., Vol. 80. p. 265-270 6 p. (ECS Transactions; vol. 80).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  10. Effect of oxygen vacancies on the ferroelectric Hf0.5Zr0.5O2 stabilization: DFT simulation

    Islamov, D. R. & Perevalov, T. V., 15 Aug 2019, In: Microelectronic Engineering. 216, 4 p., 111041.

    Research output: Contribution to journal › Article › peer-review

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